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Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  01 February 2011

Jinghong Li ,
Anthony Domenicucci ,
Dureseti Chidambarrao ,
Brian Greene ,
Nivo Rovdedo ,
Judson Holt ,
Drerren Dunn  and
Hung Ng
Jinghong Li
Affiliation:
[email protected], IBM, Micro-electyronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States, 845-894-3724
Anthony Domenicucci
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Dureseti Chidambarrao
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Brian Greene
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Nivo Rovdedo
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Judson Holt
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Drerren Dunn
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Hung Ng
Affiliation:
[email protected], IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
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Abstract

Convergent electron beam diffraction (CBED) has been successfully applied to measure strain/stress in the channel area in PMOS semiconductor device with embedded SiGe (eSiGe) for 65nm technology. Reliable results of strain/stress measurements in the channel area have been achieved by good fitting of experimental CBED patterns with theoretical calculations. Stress measurements from CBED are in good agreement with simulations. A compressive stress as high as 823.9 MPa was measured in the <110> direction in the channel area of a PMOS device with eSiGe with 15% Ge and a thickness of 80nm. Stress measurements from CBED also confirm that the depth of the eSiGe and defects such as dislocation loops within the eSiGe relax strain/stress within the film and reduce strain/stress in the channel area.

Keywords

stress/strain relationshiptransmission electron microscopy (TEM)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D05-03
Copyright
Copyright © Materials Research Society 2006

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References

1 Ghani, T., Armstrong, M., Auth, C., Bost, M., Charvat, P., Glass, G., Hoffmann, T., Thompson, K., Bohr, M. et, al., IEDM Technical Digest 2003, p978–980 Google Scholar
2 Chidambaram, P. R., Smith, B., Hall, L., Kim, Y., Jones, P., Irwin, R., Rotondaro, A., Grider, D. T., et al., 2004 Symp. on VLSI Tech. Diges. of Tech Paper, p48 Google Scholar
3 Thompson, S. E., Sun, G., Wu, K., Lim, J. and Nishida, T., Technical Digest, IEDM (2004), p221–224 Google Scholar
4 Lou, Z., Chong, Y., Kim, J., Rovedo, N., Chidambarrao, D., Li, J., Davis, R., Schepis, D., Ng, H., Rim, K. et, al., IEDM Technical Digest (2005), p495–498 Google Scholar
5 Zuo, J. M., Ultramicroscopy, 41 (1992), p211 Google Scholar
6 Armigliato, A., Balboni, R., Benedetti, A., Carnevale, G. P., Cullis, A. G., Frabboni, S. and Piccolo, D., Solid State Phenomena, Vol. 82–84 (2002), p727–734 Google Scholar
7 Toda, A., Ikarashi, N., and Ono, H., Appl. Phys. Lett., 79 (2001), p 4243 Google Scholar
8 Clement, L., Pantel, R., Kwakman, L. F. Tz., Rouviere, J. L., Appl. Phys. Lett., 85 (2004), p651 Google Scholar
9 Wolf, I. D., Senez, V., Balboni, R., Armigliato, A., Frabboni, S., Cedola, A., Lagomarsino, S., Microelectronic Engineering, 70 (2003), 425–435 Google Scholar
10 Benedetti, A., Gullis, A. G., Armigliato, A., Balboni, R., Frabboni, S., Mastracchio, G. F., Pavia, G., Appl. Surf. Sci., 188(2002), p214 Google Scholar
11 Balboni, R., Frabboni, S. and Armigliato, A., Phil. Mag., A, Vol 77(1998), p67 Google Scholar