Hostname: page-component-6bf8c574d5-l72pf Total loading time: 0 Render date: 2025-03-08T03:49:58.567Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress and its Effect on Intermixing in Si1-xGex/Si Superlattices

Published online by Cambridge University Press:  21 February 2011

S. M. Prokes
S. M. Prokes*
Affiliation:
Naval Research Laboratory, Washington D.C. 20375
Get access

Abstract

Interdiffusion behavior in long-period Si1-xGex/Si as a function of growth conditions and external stress is examined using x-ray diffraction and Raman Spectroscopy. Both symmetrically and asymmetrically-strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 eV and 4.6 eV have been obtained, respectively. In addition, an enhanced interdiffusion has also been measured in an externally stressed asymmetric superlattice. In both cases, enhanced interdiffusion has been measured whenever the Si barrier layers experience tensile stress during annealing. The Raman spectroscopy supports this result, showing an enhanced Ge diffusion into the Si barriers when these barriers are put under tensile stress. This result will be discussed in terms of the kinetics of defect formation and motion in the strained Si barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 3
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Higashi, G.S., Bean, J.C., Buescher, C., Yadvish, R., and Temkin, H., Appl. Phys. Lett. 56, (1990) 2560.Google Scholar
2 Patton, G.L., Iyer, S.S., Delaage, S.L., Tiwari, S., and Stork, J.M., IEEE Elec. Dev. Lett. 9, (1988) 165.Google Scholar
3 Gennser, U., Kesan, V.P., Iyer, S.S., Ott, J.A., and Yang, E.S., J. Electr. Mater. 23, (1993) 1173.Google Scholar
4 Kasper, E., Surface Science 174 (1986) 630.Google Scholar
5 Kash, K., Worlock, J.M., Mahoney, D.D., Gozdz, A.S., Van der Gaag, B.P., Harbison, J.P., Lin, P.S.D., and Florez, L.T., Surface Science 228 (1990) 415.Google Scholar
6 Witczak, S.C., Gaitan, M., Suehle, J.S., Perkerar, M.C., and Ma, D.I., Solid State Electron. 37, (1994) 1695.Google Scholar
7 Frank, W., Gosele, U., Mehrer, H., and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G.E. and Nowick, A.S. (Academic Press, New York, 1984) 63.Google Scholar
8 Bean, J.C., Fiory, A.F., Hull, R., and Lynch, R.T., in Proceedings of the 1st International Symposium on Si MBE, edited by Bean, J.C. (Electrochemical Society, Pennington, NJ, 985) 385.Google Scholar
9 Chang, S.J., Wang, K.L., Bowman, R.C. Jr., and Adams, P.M., Appl. Phys. Lett. 54, (1989) 1253.Google Scholar
10 Prokes, S.M. and Wang, K.L., Appl. Phys. Lett. 56 (1990) 2528.Google Scholar
11 Baribeau, J.M., Pascual, R., and Saimoto, S., Appl. Phys. Lett. 57 (1990) 1502.Google Scholar
12 Prokes, S.M., Glembocki, O.J. and Godbey, D.J., Appl. Phys. Lett. 60, (1992) 1087.Google Scholar
13 Hollander, B., Butz, R. and Mantl, S., Phys. Rev. B 46, 6975 (1992)Google Scholar
14 Cowern, N.E.B., Zalm, P.C., van der Sluis, P., Gravesteijn, D.J. and de Boer, W.B., Phys. Rev. Lett. 72, (1994) 2585.Google Scholar
15 Iyer, S.S. and LeGoues, F.K., J. Appl. Phys. 65, (1989) 4693.Google Scholar
16 Temkin, H., Chu, S.N.G., Panish, M.B. and Logan, R.A., Appl. Phys. Lett. 50, (1987) 956.Google Scholar
17 Fujii, T., Sugawara, M., Yamazaki, S., and Nakajima, K., J. Cryst. Growth 105, (1990) 348.Google Scholar
18 Gillin, W.P. and Dunstan, D.J., Phys. Rev. B50, (1994) 7495.Google Scholar
19 People, R. and Bean, J.C, Appl. Phys. Lett. 49 (1986) 229 Google Scholar
20 Prokes, S.M., Falemi, M., and Wang, K.L., J. Vac. Sci. B8 (1990) 254.Google Scholar
21 Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B4 (1986) 720.Google Scholar
22 Prokes, S.M., Mat. Res. Soc. Symp. Porc. 226, (1991) 129.Google Scholar
23 Prokes, S.M., Glembocki, O.J., Twigg, M.E., and Wang, K.L., J. Electr. Mat. 20 (1991) 389.Google Scholar
24 Renucci, M.A., Renucci, J.B., and Cardona, M., Proceedings of the Conference on Light Scattering in Solids, edited by Balkanski, M. (Flammarion, Paris, 1971) 326.Google Scholar
25 Cerdeira, F., Pinczuk, A., Bean, J.C., Batlogg, B., and Wilson, B.A., Appl. Phys. Lett. 45 1138 (1984).Google Scholar
26 DuMond, J. and Youtz, J.P., J. Appl. Phys. 11, 357 (1940).Google Scholar
27 Cahn, J.W. and Hilliard, J.E., J. Chem. Phys. 28, (1958) 258.Google Scholar
28 CRC Handbook of Chemistry and Physics, 54th edition, (Weast, R.C., ed., Cleveland, OH, 1974) F200.Google Scholar
29 Lupis, C.H.P., Chemical Thermodynamics of Materials (Elsevier, New York, 1983) 154.Google Scholar
30 Prokes, S.M., Materials Science and Technology, in press.Google Scholar
31 Antonelli, A. and Bernholc, J., Phys. Rev. B40, (1989) 10643.Google Scholar
32 Antonelli, A. and Bernholc, J., Mat. Res. Symp. Proc. 163, (1990) 523.Google Scholar