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Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers

Published online by Cambridge University Press:  21 March 2011

Michael E. Groenert ,
Christopher W. Leitz ,
Arthur J. Pitera ,
Vicky K. Yang ,
Harry Lee ,
Rajeev J. Ram  and
Eugene A. Fitzgerald
Michael E. Groenert
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, U.S.A.
Christopher W. Leitz
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, U.S.A.
Arthur J. Pitera
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, U.S.A.
Vicky K. Yang
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, U.S.A.
Harry Lee
Affiliation:
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA 02139, U.S.A.
Rajeev J. Ram
Affiliation:
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA 02139, U.S.A.
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, U.S.A.
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Abstract

AlxGa(1−x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded GexSi(1−x) virtual substrates on Si. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2×106 cm−2 enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and threshold current densities of 1550A/cm2. Identical devices grown on commercial GaAs substrates showed differential quantum efficiencies of 0.14 and threshold current densities of 1700A/cm2. This comparative data agrees with our previous measurements of near-bulk minority carrier lifetimes in GaAs grown on Ge/GeSi/Si substrates. A number of GaAs/Ge/Si integration issues including thermal expansion mismatch and Ge autodoping behavior in GaAs were overcome.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.30.1
Copyright
Copyright © Materials Research Society 2002

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References

1 Kroemer, H., Liu, T.Y., and Petroff, M., Journal of Crystal Growth 95, 96 (1989).Google Scholar
2 Hatzopoulos, Z., Cengher, D., Deligeorgis, G., Androulidaki, M., Aperathitis, E., Halkias, G., Georgakilas, A., Journal of Crystal Growth 227–228, 193 (2001).Google Scholar
3 Kazi, Z.I., Thilakan, P., Egawa, T., Umeno, M., and Jimbo, T., Japanese Journal of Applied Physics 40 (8), 4903 (2001).Google Scholar
4 Taylor, P.J., Jesser, W.A., Benson, J.D., Martinka, M., Dinan, J.H., Bradshaw, J., Lara-Taysing, M., Leavitt, R.P., Simonis, G., Chang, W., Clark, W.W., and Bertness, K.A., Journal of Applied Physics 89 (8), 4365 (2001).Google Scholar
5 Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., and Fitzgerald, E. A., Applied Physics Letters 72 (14), 1718 (1998).Google Scholar
6 Ting, S., Bulsara, M., Yang, V., Groenert, M., Samavedam, S., Currie, M., Langdo, T., Fitzgerald, E., Joshi, A., Brown, R., Wang, X., Sieg, R., Ringel, S., presented at the SPIE Conference on Optoelectronics, San Jose, CA, 1999 (unpublished).Google Scholar
7 Ringel, S.A., Carlin, J.A., Leitz, C.W., Currie, M., Langdo, T., Fitzgerald, E.A., Bulsara, M., Wilt, D.M., and Clark, E.V., presented at the 16th European Photovoltaics Solar Energy Conference and Exhibition, Glasgow, Scotland, 2000 (unpublished).Google Scholar
8 Srinivasan, G.R., Journal of the Electrochemical Society 127 (6), 1334 (1980).Google Scholar
9 Carlsson, J.O., Boman, M., presented at the 9th International Conference on Chemical Vapor Deposition, Cincinnati, OH, 1984 (unpublished).Google Scholar
10 Kasano, H., Solid State Electronics 16, 913 (1973).Google Scholar
11 Yellen, S. H., Shepard, A.H., Dalby, R.J., Baumann, J.A., Serreze, H.B., Guido, T.S., Soltz, R., Bystrom, K.J., Harding, C.M., and Waters, R.G., IEEE Journal of Quantum Electronics 29 (6), 2058 (1993).Google Scholar