We describe here an effort to provide lateral confinement of carriers within a continuous InGaAs quantum well by creating a pattern of strain in the well. A compressed InGaAsP layer overlying the quantum well and the InP barrier was patterned into submicron stressor wires by etching to within approximately 20 nm of the InP barrier. The relaxation of the compression at the edges of the quaternary stressors resulted in dilation of the quantum well material under their centers, thus lowering the band gap of the material, providing confinement for both electrons and holes there. We observed a red shift of the quantum well luminescence of 7 meV for 400 nm wide wires, evidence for the strain-induced lateral confinement. This is the first observation of a red-shifted band gap in submicron strain-confining structures.