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Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

Published online by Cambridge University Press:  15 February 2011

Jeffrey J. Welser
Jeffrey J. Welser*
Affiliation:
Stanford University, Solid State Electronics Lab., Stanford, California 94305-4055
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Abstract

The experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 309
Copyright
Copyright © Materials Research Society 1995

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References

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