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Strained SiC: Ge Layers in 4H SiC formed by Ge Implantation

Published online by Cambridge University Press:  11 February 2011

M. W. Dashiell ,
G. Xuan ,
Xin Zhang ,
E. Ansorge  and
J. Kolodzey
M. W. Dashiell
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
G. Xuan
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
Xin Zhang
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
E. Ansorge
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
J. Kolodzey
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
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Abstract

The ion implantation of germanium into 4H-SiC at 1000 °C resulted in crystalline SiC:Ge layers that are coherently strained to the (0001) oriented 4H-SiC substrates. Germanium implantation energies of 140 keV and 50 keV were chosen to form approximately 100nm thick step-like SiC:Ge layers with Ge atomic fractions ranging from 0.0007 to 0.006. High-resolution x-ray diffraction (HRXRD) and reciprocal space mapping reveal a high-quality, compressively strained SiC:Ge layer. High-temperature annealing resulted in partial relaxation of the macroscopic layer strain, however the SiC:Ge layer remained strained with a coherent interface for annealing up to at least 1650°C. Because Ge is a group-IV atom like Si and C, its incorporation into the lattice is expected to act as an isoelectronic impurity, rather than a charged donor or acceptor. Thus, high-quality, SiC:Ge layers have the potential for bandgap and strain engineered electronics such as SiC-based high electron mobility transistors (HEMTs) for RF-power electronics. Currently there is no established heterojunction pair in SiC material technology for fabricating HEMTs and other heterojunction devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K6.7
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Burk, A.A. Jr, O'Loughlin, M.J., Siergiej, R.R., Agarwal, A.K., Sriram, S., Clarke, R.C., MacMillan, M.F., Balakrishna, V., and Brandt, C.D., Solid-State Electronics, 43, 1459 (1999).Google Scholar
[2] Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Pribble, W.L., Smith, T.J., Ring, Z., Sumakeris, J., Saxler, A.W., and Milligan, J.W., IEEE IEDM Technical Digest, 385 (2001).Google Scholar
[3] Gorelik, T., Kaiser, U., Schubert, Ch., Wesch, W., and Glatzel, U., J. Mater. Res., 17, 479 (2002).Google Scholar
[4] Zorba, T.T., Mitsas, C.L., Siapkas, I.D., Terzakis, G.Z., Siapkas, D.I., Pacaud, Y., and Skorupa, W., Appl. Surf. Sci., 102, 120 (1996).Google Scholar
[5] Guedj, C. and Kolodzey, J., Appl. Phys. Lett., 74, 691 (1999).Google Scholar
[6] Strane, J.W., Stein, H.J., Lee, S.R., Doyle, B.L., Picraux, S.T., and Mayer, J.W., Appl. Phys. Lett., 63, 2786 (1993).Google Scholar
[7] Halliwell, M.A.G., Appl. Phys. A58, 135 (1994).Google Scholar
[8] Declémy, A., Oliviero, E., Beaufort, M.F., Barbot, J.F., David, M.L., Blanchard, C., Tessier, Y., and Ntsoezok, E. ,. Inst. and Meth. Phys. Res. B, 186, 318 (2002).Google Scholar
[9] Katulka, G., Guedj, C., Kolodzey, J., Wilson, R.G., Swann, C., Tsao, M.W. and Rabolt, J., Appl. Phys. Lett., 74, 540, (1999).Google Scholar
[10] Duo, Xinzhong, Liu, Weili, Zhang, Miao, Fu, Xiaorong, Huang, Jipo, Lin, Chenglu, Nucl. Instr. and Meth. B 170, 98 (2000).Google Scholar
[11] Zeimer, U., Semicond. Sci. Technol., 15, 965, (2000).Google Scholar