Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T09:43:45.271Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Relaxation in GaAs on Si by Two Groups of Misfit Dislocations

Published online by Cambridge University Press:  21 February 2011

M. Tamura ,
T. Saitoh  and
T. Yodo
M. Tamura
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
T. Saitoh
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
T. Yodo
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
Get access

Abstract

High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) as a function of film thicknesses and observation directions between two orthogonal <110> directions before and after annealing. Two groups of misfit dislocations are characterized by analyzing whether their extra half planes exist in the film and the substrate side. The group I misfit dislocations due to a stress caused by a lattice misfit between GaAs and Si consist of partial and, 60° and 90° complete dislocations in an as-grown state. After annealing partial dislocations almost disappear and 90° perfect dislocations are predominantly observed. The group II misfit dislocations due to a thermal-expansion misfit-induced stress are all of the 60° type complete dislocations, independent of film thickness and annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 437
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Zhu, J.G. and Carter, C.B., Phil. Mag. 62, 319(1990) and references therein.Google Scholar
2 Tamura, M., Yodo, T., Saitoh, T. and Palmer, J., J. Crystal Growth 150, 654 (1995).Google Scholar
3 Tsai, H.L. and Matyi, R.J., Appl. Phys. Lett. 55, 265 (1989).Google Scholar
4 Gerthsen, D., Biegelsen, D.K., Ponce, F.A. and Tramontana, J.C., J. Crystal Growth 106, 157 (1990).Google Scholar
5 Lee, J.W., and Tsai, H.L.: J. Vac. Sci. Technol. B5, 819 (1987).Google Scholar
6 Rosner, S.J., Amano, J., Lee, J.W. and Fan, J.C.C.: Appl. Phys. Lett. 53, 1101 (1988).Google Scholar
7 Vannuffel, C., Beaucour, J., Andre, J.P. and Chevalier, J.P.: Inst. Phys. Conf. Ser. No. 100 p.115 (1989).Google Scholar
8 Cho, K.I., Choo, W.K., Lee, J.Y., Park, S.C. and Nishinaga, T.: J. Appl. Phys. 69, 237 (1991)Google Scholar
9 Tsai, H.L. and Lee, J.W.: Appl. Phys. Lett. 51, 130 (1987).Google Scholar
10 Kvam, E.P., Maher, D.M. and Humphreys, C.J.: J. Mater. Res. 5, 629 (1991)Google Scholar
11 Willis, J.P., Jain, S.C and Bullough, R.: Phil. Mag. A64, (1991) 629.Google Scholar
12 Gosling, T.J.: J. Appl. Phys. 74, 5415 (1993).Google Scholar
13 Romano, L.T., Knall, J., Bringans, R.D. and Biegelsen, D.K.: Appl. Phys. Lett. 65, 869 (1994).Google Scholar