Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:34:16.092Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Relaxation and Dislocation Confinement in Epitaxial SrTiO3 by Two-Step Growth Technique and the Resulting Dielectric Response

Published online by Cambridge University Press:  26 February 2011

Tomoaki Yamada ,
Vladimir O. Sherman ,
Alexander K. Tagantsev ,
Dong Su ,
Paul Muralt  and
Nava Setter
Tomoaki Yamada
Affiliation:
[email protected], Ecole Polytechnique Fédérale de Lausanne, EPFL, STI-IMX-LC, MXD 210, Station 12, Lausanne, VD, CH-1015, Switzerland, +41 21 693 4952, +41 21 693 5810
Vladimir O. Sherman
Affiliation:
[email protected], Switzerland
Alexander K. Tagantsev
Affiliation:
[email protected], Switzerland
Dong Su
Affiliation:
[email protected], Switzerland
Paul Muralt
Affiliation:
[email protected], Switzerland
Nava Setter
Affiliation:
[email protected], Switzerland
Get access

Abstract

A two-step growth technique was used to achieve effective strain relaxation and dislocation confinement of epitaxial SrTiO3(STO) films and through this to improve their microwave dielectric properties. The crystallization of a very thin quasi-amorphous STO layer deposited at a low temperature in the initial growth step enhanced the strain relaxation from the lattice mismatch at the expense of the formation of high density of misfit dislocations. By varying the thickness of the first layer, different strain states of the films were systematically achieved while keeping the total film thickness unchanged. This allowed the study of the effect of strain on permittivity, and showed good agreement with theoretical predictions. Further more, the two-step growth technique suppressed significantly the threading dislocation density in the film, the dislocations being confined to the first layer. This in turn caused reduction in the extrinsic dielectric loss at microwave frequency. The loss reduction was analyzed and explained based on a dielectric composite model.

Keywords

ferroelectricstress/strain relationshipdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-02
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Vendik, O.G., Hollman, E.K., Kozyrev, A.B., and Prudan, A.M., J. Supercond. 12, 325 (1999).Google Scholar
2 Jia, Q.X., Findikoglu, A.T., Reagor, D., and Lu, P., Appl. Phys. Lett. 73, 897 (1998).Google Scholar
3 Yamada, T., Astafiev, K.F., Sherman, V.O., Tagantsev, A.K., Muralt, P. and Setter, N., Appl. Phys. Lett. 86, 142904 (2005).Google Scholar
4 Yamada, T., Astafiev, K.F., Sherman, V.O., Tagantsev, A.K., Su, D., Muralt, P. and Setter, N., J. Appl. Phys. 98, 054105 (2005).Google Scholar
5 Su, D. et al. , unpublished (2005).Google Scholar
6 Suzuki, T., Nishi, Y., and Fujimoto, M., Philos. Mag. A 79, 2461 (1999).Google Scholar
7 Pertsev, N.A., Tagantsev, A.K., and Setter, N., Phys. Rev. B 61, R825 (2000).Google Scholar
8 Tagantsev, A.K., Sherman, V.O., Astafiev, K.F., Venkatesh, J., and Setter, N., J. Electroceramics 11, 5 (2003).Google Scholar
9 Canedy, C.L., Li, H., Alpay, S.P., Salamanca-Riba, L., Roytburd, A.L., and Ramesh, R., Appl. Phys. Lett. 77, 1695 (2000).Google Scholar
10 Li, H., Roytburd, A.L., Alpay, S.P., Tran, T.D., Salamanca-Riba, L., and Ramesh, R., Appl. Phys. Lett. 78, 2354 (2001).Google Scholar
11 Astafiev, K.F., Sherman, V.O., Tagantsev, A.K., Setter, N., Kaydanova, T., and Ginley, D., Appl. Phys. Lett. 84, 2385 (2004).Google Scholar
12 Astafiev, K.F., Tagantsev, A.K., and Setter, N., J. Appl. Phys. 97, 014106 (2005).Google Scholar