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Strain Induced Intrinsic Quantum wells as the Origin of Broad Band Photoluminescence in Silicon Containing Extended Defects

Published online by Cambridge University Press:  25 February 2011

H. Weman  and
B. Monemar
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
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Abstract

A new recombination mechanism occuring in semiconductors containing extended defects is presented. The model is based on experimental data both from hydrogen plasma treated silicon, containing extended defects like platelets, and from oxygen precipitated silicon. The broad photoluminescence bands from these samples are attributed to the heavily damaged regions surrounding the extended defects, where electrons and holes can be localized in the strain-induced potential wells. From a theoretical calculation it is shown that the compressive strain field surrounding [111] and [100] platelets are sufficient to cause a local band gap reduction of as much as 0.3 eV, consistent with the experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 257
Copyright
Copyright © Materials Research Society 1990

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