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Strain in Epitaxial BaTiO3 Thin Films Prepared by MOCVD

Published online by Cambridge University Press:  10 February 2011

S. Chattopadhyay ,
A. Teren  and
B.W. Wessels
S. Chattopadhyay
Affiliation:
Materials Science Department, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60208, USA
A. Teren
Affiliation:
Materials Science Department, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60208, USA
B.W. Wessels
Affiliation:
Materials Science Department, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60208, USA, [email protected]
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Abstract

The microstrain in epitaxial BaTiO3 thin films has been investigated using x-ray diffraction. The full width half maximum of the (001) diffraction peaks ranged from 0.12 to 0.49 deg. From the analysis of the angular dependence of the diffraction peak broadening, it is concluded that the broadening is due predominantly to strain. The magnitude of the microstrain decreases sharply with increasing film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 489
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Wills, L.A., Wessels, B.W., Richeson, D.S. and Marks, T.J., Appl. Phys. Lett. 60, p. 42 (1992).Google Scholar
[2] Lu, H.A., Wills, L.A., Wessels, B.W., Lin, W.P., Zhang, T.G., Wong, G.K., Neumayer, D.A. and Marks, T.J., Appl. Phys. Lett. 62, p. 1,314 (1993).Google Scholar
[3] Gill, D.M., Block, B.A., Conrad, C.W., Wessels, B.W., and Ho, S.T., Appl. Phys. Lett. 69, p. 2,968 (1996).Google Scholar
[4] Joshi, P.C. and Desu, S.B., Thin Solid Films 300, p. 289 (1997).Google Scholar
[5] Gilbert, S.R., Wills, L.A., Wessels, B.W., Schindler, J.L., Thomas, J.A. and Kannewurf, C.R., J. Appl. Phys. 80, p. 969 (1996).Google Scholar
[6] Chiba, T., Itoh, K. and Matsumoto, O., Thin Solid Films 300, p. 6 (1997).Google Scholar
[7] Buskirk, P.C.V., Gardiner, R., Kirlin, P.S. and Krupanidhi, S., J. Vac. Sci. Technol. A 10, p. 1578 (1992).Google Scholar
[8] Erbil, A., Braun, W., Kwak, B.S., Wilkens, B.J., Boatner, L.A. and Budai, J.D., J. Cryst. Growth 124, p. 684 (1992).Google Scholar
[9] Kim, I., Lee, C. and Parks, S.J., Jpn. J. Appl. Phys. 33, p. 5,125 (1994).Google Scholar
[10] Jang, J.W., Chung, S.J., Cho, W.J., Hahn, T.S. and Choi, S.S., J. Appl. Phys. 81, p. 6,322 (1997).Google Scholar
[11] Yoneda, Y., Kasatani, H., Terauchi, H., Yano, Y., Terashima, T. and Bando, Y., J. Cryst. Growth 150, p. 1090 (1995).Google Scholar
[12] Yoneda, Y., Okabe, T., Sakaue, K., Terauchi, H., Kasatani, H. and Deguchi, K., J. Appl. Phys. 83, p. 2,458 (1998).Google Scholar
[13] Beckers, L., Schubert, J., Zander, W., Ziesmann, J., Eckau, A., Leinenbach, P. and Buchal, Ch., J. Appl. Phys. 83, p. 3,305 (1998).Google Scholar
[14] Chen, J., Wills, L.A., Wessels, B.W., Schulz, D.L. and Marks, T.J., J. Electr. Mat. 22, p. 701 (1993).Google Scholar
[15] Dravid, V.P., Zhang, H., Wills, L.A. and Wessels, B.W., J Mater. Res. 9, p. 426 (1994).Google Scholar
[16] Hordon, M.J. and Averbach, B.L., Acta Met. 9, p. 237 (1961).Google Scholar
[17] Hwang, C.S., Vaudin, M.D. and Stauf, G.T., J. Mater. Res. 12, p. 1625 (1997).Google Scholar
[18] Rachinger, W.A., J. Sci. Instrum. 25, p. 254 (1948).Google Scholar
[19] Speriousu, V.S., J. Appl. Phys. 52, p. 6094 (1981).Google Scholar
[20] Hoerman, B.H., Ford, G.M., Kaufiann, L.D. and Wessels, B.W., Appl. Phys. Lett. 73, 2248 (1998).Google Scholar