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Strain Effects on Excitonic Transitions in GaN

Published online by Cambridge University Press:  10 February 2011

W. Shan ,
R.J. Hauenstein ,
A.J. Fischer ,
J.J. Song ,
W.G. Perry ,
M.D. Bremser ,
R.F. Davis  and
B. Goldenberg
W. Shan
Affiliation:
Center for Laser and Photonics Research, Oklahoma State University, Stillwater, OK 74078
R.J. Hauenstein
Affiliation:
Center for Laser and Photonics Research, Oklahoma State University, Stillwater, OK 74078
A.J. Fischer
Affiliation:
Center for Laser and Photonics Research, Oklahoma State University, Stillwater, OK 74078
J.J. Song
Affiliation:
Center for Laser and Photonics Research, Oklahoma State University, Stillwater, OK 74078
W.G. Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
M.D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
B. Goldenberg
Affiliation:
Honeywell Technology Center, Plymouth, MN 55441
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Abstract

We present the results of experimental studies of the strain effects on the excitonic transitions in GaN epitaxial layers on sapphire and SiC substrates. Photoluminescence and reflectance spectroscopies were performed to measure the energy positions of exciton transitions and X-ray diffraction measurements were conducted to examine the lattice parameters of GaN epitaxial layers grown on different substrates. Residual strain induced by the mismatch of lattice constants and thermal-expansion between GaN epitaxial layers and substrates was found to have a strong influence in determining the energies of excitonic transitions. The overall effects of the strain generated in GaN is compressive for GaN grown on sapphire and tensile for GaN on SiC substrate. The uniaxial and hydrostatic deformation potentials of wurtzite GaN were derived from the experimental results. Our results yield the uniaxial deformation potentials b1≈−5.3 eV and b2≈2.7 eV, as well as the hydrostatic components a1≈−6.5 eV and a2≈−11.8 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 841
Copyright
Copyright © Materials Research Society 1997

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References

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