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Strain Effects in Heteroepitaxial Growth: Island and Dot Formation Kinetics

Published online by Cambridge University Press:  10 February 2011

D. R. M. Williams  and
L. M. Sander
D. R. M. Williams
Affiliation:
Research School of Physical Sciences & Engineering, The Australian National University, Canberra ACT 0200 AUSTRALIA, drw [email protected]
L. M. Sander
Affiliation:
Department of Physics,University of Michigan, Ann Arbor, MI.
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Abstract

In many situations where islands and quantum dots are formed on a growing surface strain effects are believed to play an important role. Here we present some preliminary results from a computer simulation study of a one-dimensional model system. Our system consists of an A material upon which grows a B material with a different lattice constant. We only consider the case where less than one monolayer of B has grown on the surface. At any given time the surface consists of a series of “islands” of B bounded by up and downsteps. Dispersed between these islands are mobile B atoms. In general, because of the lattice mismatch between A and B the mobile B atoms are repelled from the islands. This repulsion has an effect on the island size distribution and more particularly on the number of islands per unit length. Here we show that for a moderate repulsion there is a large effect on the number of islands per unit length. However, as the repulsion is increased the effect grows only gradually.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 767
Copyright
Copyright © Materials Research Society 1997

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