Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:45:30.353Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Effects in GaN on Sapphire: Towards a Quantitative Comprehension

Published online by Cambridge University Press:  21 February 2011

O. Briot ,
J.P. Alexis ,
B. Gil  and
R.L. Aulombard
O. Briot
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
J.P. Alexis
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
B. Gil
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
R.L. Aulombard
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
Get access

Abstract

We present here a detailed investigation of the optical properties of GaN epilayers grown by low pressure MOVPE on sapphire substrates, using 2K photoluminescence as well as 2K reflectance spectroscopy. A large series of samples has been grown under eclectic conditions (V/III ratio, growth temperature, nitridation steps,...) which allows us to propose the first semi-quantitative investigation of the sample-dependent band gap energies. This dependence of the bandgap is analyzed in terms of i) residual stress, ii) exciton parameters and iii) deformation potential characteristics of the A, B, C excitons. the residual stress cannot be simply explained in terms of the differences between the thermal expansion coefficients of the various compounds, but are strongly correlated to the V/III growth ratio imposed during the growth, and subsequently to the influence of this parameter at the scale of electronic and structural characteristics of the deposited layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 411
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64, 1687, (1994)Google Scholar
2 Briot, O., Sanchez, S., Gil, B., and Aulombard, R. L. in proceedings of the ICSCRM Kyoto 1995 Google Scholar
3 Briot, O., Alexis, J. P., Sanchez, S., Gil, B., and Aulombard, R. L. in proceedings of the Topical workshop on nitrides TWN’95 Kyoto 1995 Google Scholar
4 Briot, O., Alexis, J. P., Gil, B., and Aulombard, R. L., this proceedings, paper AAA12.35Google Scholar
5 Eckey, L., Podlowski, L., Golner, A., Hoffmann, A., Broser, I., Meyer, B. K., Volm, D., Streibl, T., Hiramatsu, K., Detchprohm, T., Amano, H., Akasaki, I. in proceedings of the Topical workshop on nitrides TWN’95 Kyoto 1995 Google Scholar
6 in this paper, we use the notations of Koster, Dimmock, Wheeler and Statz in "Properties of the thirty-two point groups" MIT Press Cambridge 1963 Google Scholar
7 Gil, B., Briot, O., and Aulombard, R.L., Phys. Rev.B, (Rapid Com.) 52, 15 December issueGoogle Scholar
8 Data in Science and Technology - Semiconductors: Group IV Elements and III-V Compounds Edited by O.Madelung Springer Verlag Berlin Heidelberg (1991)Google Scholar