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Strain Dependent Diffusion in the Dry Thermal Oxidation Process of Crystalline Si

Published online by Cambridge University Press:  22 February 2011

C. H. Bjorkman  and
G. Lucovsky
C. H. Bjorkman
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
G. Lucovsky
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
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Abstract

We have investigated the influence of strain on the rate of thermal oxidation of crystalline Si. This was carried out by performing the oxidation in two steps at 850°C with an intermediate annealing step. It was observed that an anneal at 1050°C increased the oxidation rate 20% compared with an anneal at 850°C. At the same time, the films annealed at higher temperatures exhibited lower levels of strain, as determined by infrared spectroscopy, in the oxide layer grown before the anneal. These results have been interpreted in terms of a strain dependent diffusion model for the thermal oxidation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 81
Copyright
Copyright © Materials Research Society 1992

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References

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