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STM Study of Reconstruction on Si(III)

Published online by Cambridge University Press:  10 February 2011

M. Umekawa ,
S. Ohara ,
S. Tatsukawa ,
H. Kuriyama  and
S. Matsumoto
M. Umekawa
Affiliation:
Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223, Japan
S. Ohara
Affiliation:
Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223, Japan
S. Tatsukawa
Affiliation:
Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223, Japan
H. Kuriyama
Affiliation:
Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223, Japan
S. Matsumoto
Affiliation:
Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223, Japan
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Abstract

The formation of the boron-induced reconstruction on Si(111) 7×7 surface has been studied with scanning tunneling microscope. By evaporating elemental B on Si elevated at high temperatures, reconstructed structures develop from the step edge to the adjacent lower terrace. They emerge at temperatures between 800°C and 900°C. It indicates that phase transition from 7×7 to 1×1 surface structure is necessary for forming the √3-B reconstructed structures. The phase boundary between 7×7 and regions is a straight line with termination of the faulted halves of 7×7 unit cell. It is also found that strip or triangle regions are formed, depending on the direction of the step propagation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 167
Copyright
Copyright © Materials Research Society 1997

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References

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