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STM Study of Initial Growth of Titanium Silicide on Si(III)

Published online by Cambridge University Press:  10 February 2011

H. Kuriyama ,
S. Ohara ,
K. Ezoe ,
T. Yamamoto ,
S. Tatsukawa ,
M. Umekawa  and
S. Matsumoto
H. Kuriyama
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Ohara
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
K. Ezoe
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
T. Yamamoto
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Tatsukawa
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
M. Umekawa
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
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Abstract

The nucleation and initial growth of titanium suicide on Si(111)7×7 surface has been studied using the scanning tunneling microscopy(STM) in ultrahigh vacuum. At room temperature Ti atoms react with Si atoms and preferentially adsorb on faulted half of the 7×7 surface. By annealing at 600°C, islandlike structures(amorphous titanium suicide) and striplike structures(crystalline titanium suicide) are formed. Annealing at 700°C drives the growth of striplike structures from islandlike structures. The striplike structures grow parallel to specific directions on the 7×7 surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 79
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Kim, L. H., Lee, J. J., Seo, D. J. et. al., J. Appl. Phys., 71 (1992) 3812 Google Scholar
[2] Wang, M. H. and Chen, L. J., J. Appl. Phys., 71 (1992) 5918 Google Scholar
[3] Colgan, E. G., Clevenger, L. A. and Cabrai, C., Appl. phys. Lett., 65 (1994) 2009 Google Scholar
[4] Stephenson, A. W. and Weiland, M. E., J. Appl. Phys., 77 (1995) 563 Google Scholar
[5] Stephenson, A. W. and Weiland, M. E., J. Appl. Phys., 78 (1995) 5143 Google Scholar
[6] Köhler, U. K., Demuth, J. E. and Hamers, R. J., Phys. Rev. Lett., 60 (1988) 2499 Google Scholar