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STM Study of Diamond(001) Surface

Published online by Cambridge University Press:  25 February 2011

Takashi Tsuno ,
Takahiro Imai ,
Yoshiki Nishibayashi  and
Naoji Fujimori
Takashi Tsuno
Affiliation:
Itami Research Laboratories, Sumitomo Electric Industries 1–1–1 Koyakita, Itami, Hyogo 664, Japan
Takahiro Imai
Affiliation:
Itami Research Laboratories, Sumitomo Electric Industries 1–1–1 Koyakita, Itami, Hyogo 664, Japan
Yoshiki Nishibayashi
Affiliation:
Itami Research Laboratories, Sumitomo Electric Industries 1–1–1 Koyakita, Itami, Hyogo 664, Japan
Naoji Fujimori
Affiliation:
Itami Research Laboratories, Sumitomo Electric Industries 1–1–1 Koyakita, Itami, Hyogo 664, Japan
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Abstract

Undoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.

For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.

The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 115
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCE

[1] Fujimori, N., Imai, T. and Doi, A., Vacuum 36 99 (1986).CrossRefGoogle Scholar
[2] Shiomi, H., Tanabe, K., Nishibayashi, Y. and Fujimori, N., Jpn. J. Appl. Phys. 29 34 (1990).CrossRefGoogle Scholar
[3] Everson, M. P. and Tamor, M. A., J. Vac. Sci. Technol. B9 1570 (1991).CrossRefGoogle Scholar
[4] Turner, K. F., Stoner, B. R., Bergman, L., Glass, J. T. and Nemanich, R. J., J. Appl. Phys. 69 (1991) 6400.Google Scholar
[5] Phelps, A. W. and Owens, T. W., Proc. 2nd Int. Svrnp. on Diamond Materials, (The Electrochem. Soc, Pennington, 1991), pp. 502–509.Google Scholar
[6] Lurie, P. G. and Wilson, J. M., Surf. Sci. 65 453 (1977).Google Scholar
[7] Hamza, A. U., Kubiak, G. D. and Stulen, R. H., Surf. Sci. 237 35 (1990)Google Scholar
[8] Tsuno, T., Imai, T., Nishibayashi, Y., Hamada, K. and Fujimori, N., Jpn. J. Appl. Phys. 30 1063 (1991).Google Scholar
[9] Tsuno, T., Imai, T., Nishibayashi, Y. and Fujimori, N., Extended Abstracts (The 52nd Autumn Meeting, 1991, Jpn. Soc. Appl. Phys.), in preparation.Google Scholar
[10] Chadi, D. J., Phys. Rev. Lett. 59 468 (1989).Google Scholar