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STM Study of a Defect-Related Si(001)-c(4×4) Surface

Published online by Cambridge University Press:  10 February 2011

Masamichi Yoshimura  and
Kazuyuki Ueda
Masamichi Yoshimura
Affiliation:
Toyota Technological Institute, Hisakata, Tempaku-ku, Nagoya 468, Japan
Kazuyuki Ueda
Affiliation:
Toyota Technological Institute, Hisakata, Tempaku-ku, Nagoya 468, Japan
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Abstract

We demonstrate scanning tunneling microscopy studies of a Si(001)-c(4×4) structure which consists of a considerable number of dimer vacancies (missing dimers). Two different preparation methods are examined; one is hydrogen desorption and another is a special annealing and cooling process without hydrogen. The STM images reveal that atomic structure of the c(4×4) prepared without hydrogen is quite different from that prepared with hydrogen and is well described by the missing dimer model. A moiré-like pattern is observed on the c(4×4) surface prepared by hydrogen with an increase in the tip-sample distance, which suggests that the atoms lying in the subsurface should be considered for the precise description of the c(4×4) structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 203
Copyright
Copyright © Materials Research Society 1997

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References

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