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STM investigation of energetic insertion during direct ion deposition

Published online by Cambridge University Press:  21 March 2011

Joshua M. Pomeroy
Affiliation:
currently with Haldor Topsøe A/S, Denmark
Aaron Couture
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
Joachim Jacobsen
Affiliation:
currently with Haldor Topsøe A/S, Denmark
Barbara H. Cooper
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853USAdeceased August 1999
J.P. Sethna
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
Joel D. Brock
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
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Abstract

Thin copper films have been deposited on single crystal copper substrates and characterized using a UHV Scanning Tunneling Microscope to probe the effect of atomic insertions during hyperthermal ion deposition. At low temperatures, atomic insertions are predicted to provide a net downhill current that offsets the roughening effect due to uphill “Schwoebel” currents leading to a net smoothing of the surface. Films have been grown at several different energies targeted to observe a crossover from insertion driven smoothing to adatom-vacancy dominated roughening. Copper thin films are deposited near 20 eV using a mass selected ion deposition system that allows precise control (+/− 2 eV) over the energy of constituent atoms. Experimental observations are compared with a sophisticated Kinetic Monte Carlo and Molecular Dynamics hybrid (KMC-MD) simulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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