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STLOY OF Nb/Si MULTILAYERS

Published online by Cambridge University Press:  28 February 2011

C. Li ,
X. Cai ,
Z. Ye ,
H. Zhang ,
W. Zharng ,
G. Xiong ,
K. Wu ,
S. Wang  and
D. Yin
C. Li
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
X. Cai
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
Z. Ye
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
H. Zhang
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
W. Zharng
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
G. Xiong
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
K. Wu
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
S. Wang
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
D. Yin
Affiliation:
Department of Physics, Pekirng University, Beijing Thina
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Abstract

A systematic study of superconducting Te, Hc and also the behavior of resistivity of Nb/Si mfltiiayers is reported. Nb and Si layers with different thicknesses were deposited alternatively in an LUIV two electron—beam evaporating installation and controlled automatically by a microcomputerquartz—monitor system. Well reproduciole results were achieved. Structural analyses show very good modulated structure with (110)textured polycrystallino Nb and] amorphous Si layers. Superconducting Tc of Nb/Simultilayers are significantly higher than that of the sputtered Nb/Ge system. Thevariation of Hc(T) in parallel field manifests a 2D–3D crossover with transformation temperature of 0.7– 0.8 Tc. The possible mechanism and implication of these phenomena were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 177
Copyright
Copyright © Materials Research Society 1986

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References

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