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Stimulated Emission from Excitons in a Quantum Wire Laser Fabricated by Cleaved Edge Overgrowth

Published online by Cambridge University Press:  21 February 2011

Werner Wegscheider ,
Loren Pfeiffer ,
Marc Dignam ,
Aron Pinczuk  and
Kenneth West
Werner Wegscheider
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Loren Pfeiffer
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Marc Dignam
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Aron Pinczuk
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Kenneth West
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Quantum wires which form at the T-shaped intersection of two 7 nm wide quantum wells have been embedded in the active region of AlGaAs/GaAs lasers. The quantum wires whose dimensions can be precisely controlled on a monolayer length scale have been prepared by cleaved edge overgrowth, a molecular beam growth technique which involves regrowth on the cleavage plane of a previously grown multilayer structure. The quantum wire emission wavelength is found to be nearly independent of the optical excitation level. This absence of band-gap renormalization effects at all pump intensities implies that the gain mechanism in our laser is excitonic, and further indicates a marked increase in the stability of the excitonic gas phase in one dimension. This is consistent with the observed increase in the exciton binding energy by more than 50% compared to the two-dimensional case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 401
Copyright
Copyright © Materials Research Society 1994

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