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Stepwise Monolayer Growth of GaAs by Pulsed Laser Metal Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  28 February 2011

Atsutoshi Doi ,
Yoshinobu Aoyagi  and
Susumu Namba
Atsutoshi Doi
Affiliation:
The Institute of Physical and Chemical Research Wako-shi, Saitama, 351-01, Japan
Yoshinobu Aoyagi
Affiliation:
The Institute of Physical and Chemical Research Wako-shi, Saitama, 351-01, Japan
Susumu Namba
Affiliation:
The Institute of Physical and Chemical Research Wako-shi, Saitama, 351-01, Japan
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Abstract

Atomic layer epitaxy (ALE) of GaAs by pulsed laser metal organic vapor phase epitaxy is reported. Suspension of Ga deposition at 100% coverage is an essential part of the growth mechanism for ideal ALE. This is achieved by a photo-catalytic decomposition of adsorbed trimethylgallium (TMG). Selective enhancement of the decomposition rate for adsorbed TMG on As, with no enhancement for that on Ga is the main reason for suspension of Ga deposition at 100% coverage. A decomposition rate for TMG on As which is about 100 times faster than that on Ga is estimated from a comparison between theory and experiment.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 217
Copyright
Copyright © Materials Research Society 1987

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References

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