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Stem Microanalysis of Hazed Polycrystalline Silicon Layers

Published online by Cambridge University Press:  21 February 2011

G.J.C. Carpenter  and
D.C. Houghton
G.J.C. Carpenter
Affiliation:
Physical Metallurgy Research Laboratory, Canada Centre for Mineral and Energy Technology, 568 Booth St., Ottawa, Canada, KlA 0G1
D.C. Houghton
Affiliation:
Bell-Northern Research Laboratories, P.O. Box 3511, Station C, Ottawa, Canada, KlY 4H7
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Abstract

The LPCVD of polysilicon on oxidized silicon wafers sometimes results in defective material having a “hazed” appearance. Examination of this material by SEM has revealed surface nodules which correlate on a one-to-one basis with anomalously large silicon grains, observed by transmission microscopy. Darkfield microscopy has shown that this abnormal grain growth initiated during deposition. X-ray EDS analysis of isolated poly-Si nodules revealed the presence of metallic impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 255
Copyright
Copyright © Materials Research Society 2006

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References

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