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Steady-State Photoconductivity in Undoped Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Jeffrey Zhaohuai Liu  and
S. Wagner
Jeffrey Zhaohuai Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

An analytical expression for the thermal activation energy of the steady-state photoconductivity is shown to agree with experimental data in a range of temperature and generation rate for undoped hydrogenated amorphous silicon (a-Si:H). This agreement supports our suggestion that the commonly observed small activation energy of the photoconductivity in undoped a-Si:H originates in the strong temperature dependence of the quasi-Fermi level for electrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 193
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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7. The temperature coefficient δ of EC can be approximated as half of that of the optical gap Eg. dEgd(kT)≈5 around room temperature for a-Si:H. See, Cody, G.D., in Semiconductors and Semimetals, 21 B, ed. by Pankove, J.I. (Academic Press, New York, 1987), p. 11.Google Scholar
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