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Steady-State Photoconductivity in Undoped Amorphous Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
An analytical expression for the thermal activation energy of the steady-state photoconductivity is shown to agree with experimental data in a range of temperature and generation rate for undoped hydrogenated amorphous silicon (a-Si:H). This agreement supports our suggestion that the commonly observed small activation energy of the photoconductivity in undoped a-Si:H originates in the strong temperature dependence of the quasi-Fermi level for electrons.
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- Copyright © Materials Research Society 1989