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Steady State Photocarrier Charge Collection in a-Si:H for Electrons and Holes
Published online by Cambridge University Press: 21 February 2011
Abstract
Carrier transport in amorphous silicon pin-diodes has been analyzed by steady state photocarrier charge collection applying strongly absorbed light. For low intensities at room temperature electron charge collection is limited by recombination in the generation region. For increasing intensity ø and/or decreasing temperature charge collection becomes nonlinear in ø and shows S-like characteristics versus voltage.
We present a model for this behaviour, including space charge limitation which e.g. for holes in a-Si:H limits charge collection even at room temperature due to low extended state mobility of holes and dark Fermi level position above midgap.
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- Copyright © Materials Research Society 1991
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