Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:18:32.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Steady State and Transient Capacitance Measurements of the Energy Levels of a Low Angle Tilt Boundary in a Germanium Bicrystal

Published online by Cambridge University Press:  15 February 2011

A. Broniatowski  and
J.C. Bourgoin
A. Broniatowski
Affiliation:
C.N.R.S., Laboratoire P.M.T.M., Avenue J.B. Clèment, 93430 Villetaneuse (France)
J.C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'E.N.S., Universitè Paris 7, 2, place Jussieu, 75251 Paris Cedex 05, (France)
Get access

Abstract

Steady state and transient capacitance (DLTS) measurements have been performed on a low angle tilt boundary in a germanium bicrystal, in combination with an electron microscope study of the boundary dislocation structure. A characteristic level has been found at 0.42 eV below the bottom of the conduction band, with a density about 109 cm-2 and an electronic capture cross-section about 5 × 10-12 cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 119
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bardeen, J., Phys. Rev. 71, 717 (1949).CrossRefGoogle Scholar
2. The bicrystals were provided by Cristaltec, a crystal growth division of the Centre d'Etude Nuclèaire de Grenoble (France).Google Scholar
3. Bourret, A. and Desseaux, J., Phil. Mag. 39, 405 (1979).CrossRefGoogle Scholar
4. Bourret, A. in : Electron Microscopy 1980, vol. 1, Brederoo, P. and Boom, G. eds.(North Holland, New York 1980), p. 306.Google Scholar
5. Taylor, W.E., Odell, N.H. and Fan, H.Y., Phys. Rev. 88, 867 (1952).CrossRefGoogle Scholar
6. Mueller, R.K., J. Appl. Phys. 30, 1004 (1959).CrossRefGoogle Scholar
7. Seager, C.H., Pike, G.E. and Ginley, D.S., Phys. Rev. Lett. 43, 532 (1979).CrossRefGoogle Scholar
8. Seager, C.H. and Castner, T.G., J. Appl. Phys. 49, 3879 (1978).CrossRefGoogle Scholar
9. Broniatowski, A., J. Physique 42, 741 (1981).CrossRefGoogle Scholar
10. Spencer, M., Stall, R., Eastman, L.F. and Wood, C.E.C., J. Appl. Phys. 50, 8006 (1979).CrossRefGoogle Scholar
11. Stratton, R., Proc. Phys. Soc. B 69, 513 (1956).CrossRefGoogle Scholar
12. Broniatowski, A. and Bourgoin, J.C., unpublished.Google Scholar
13. Broniatowski, A., Blosse, A., Srivastava, P.C. and Bourgoin, J.C., unpublished.Google Scholar
14. Seager, C.H. and Pike, G.E., Appl. Phys. Lett. 35, 709 (1979).CrossRefGoogle Scholar
15. Mueller, R.K., J. Appl. Phys. 30, 546 (1959).CrossRefGoogle Scholar