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Published online by Cambridge University Press: 15 February 2011
Steady state and transient capacitance (DLTS) measurements have been performed on a low angle tilt boundary in a germanium bicrystal, in combination with an electron microscope study of the boundary dislocation structure. A characteristic level has been found at 0.42 eV below the bottom of the conduction band, with a density about 109 cm-2 and an electronic capture cross-section about 5 × 10-12 cm2.