Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:20:06.271Z Has data issue: false hasContentIssue false
  • English
  • Français

Status of β-SiC, Diamond and C-BN Semiconductors; Comparison of a Si Power Fet to a Hypothetical Diamond Fet

Published online by Cambridge University Press:  26 February 2011

Richard Koba  and
William Russell
Richard Koba
Affiliation:
Diamond Materials, Inc., 2820 E. College Ave., State College, PA 16801
William Russell
Affiliation:
Diamond Materials, Inc., 2820 E. College Ave., State College, PA 16801
Get access

Abstract

Monocrystalline β-SiC, diamond and cubic boron nitride (c-BN) are the three ultimate semiconductors. These materials show great promise as active semiconductors for power electronics because of their wide bandgap, the existence of substitutional dopants, their high dielectric strength, their low dielectric constant, and their high thermal conductivity. To illustrate their superiority, a conventional Si.power FET is compared to a theoretical diamond FET. By assuming the diamond FET can operate hotter and at a higher voltage, it is calculated that the diamond FET should deliver up to 35 times more power-to-load than the Si FET.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 43
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Phelps, A. W., Spear, K. E., Howard, W., Huang, D. and White, W. B. in Diamond. BN. SIC and Related Wide BandiaD Semiconductors, (Mater. Res. Soc. Proc., Pittsburgh, PA 1990).Google Scholar
2. Parsons, J. D., Bunshah, R. F. and Stafsudd, O. M., Solid State Technology, [11] 133 (1985).Google Scholar
3. Powell, J. A. in Novel Refractgry Semiconductors, edited by Emin, et al. (Mater. Res. Soc. Proc. 97, Pittsburgh, PA 1987) p. 159.Google Scholar
4. Matsunami, H., Nakayama, M., Yoshinobu, T., Shiomi, H., Fuyuki, T. in Amorph. and Cryst. SIC and Related Materials II, edited by Rahman, , et al. (Springer Verlag, Berlin 1989) p. 157.Google Scholar
5. Spitsyn, B. V., Bouilov, L. L., and Derjaguin, B. V., J. of Crystal Growth, 52,219 (1981).Google Scholar
6. Yoder, M. N., in the Nineteenth Biennial Conference on Carbon, Extended Abstracts and Program. The Pennsylvania State University, 408 (1989).Google Scholar
7. Yoder, M. N., Office of Naval Research (private communication) 1989.Google Scholar
8. Shanfield, S. and Wolfson, R, J. Vac. Sci. Techno A, 1 [21] 323 (1983).Google Scholar
9. Inagawa, K., Watanabe, K., Ohsone, H., Saltoh, K., Itoh, A., J. Vac. Sci, Tech.A, 5 [4] 2696 (1987).Google Scholar
10. Lin, P., Deshpandey, C., Doerr, H., Bunshah, R F., Chopra, K. and Vankar, V., Thin Solid Fflms, 153, 487 (1987).Google Scholar
11. Ravi, K. V. and Landstrass, M. I. in Diamond and Diamond-Like Films, edited by Dismukes, , et al. (Electrochem. Society Proc. Vol 89–12, Pennington, NJ 1989) p. 23 Google Scholar
12. Hoover, D., presented at GAMI Conference on Diamond and DLC Coatings, Marco Island, FL, October 16, 1989 (unpublished).Google Scholar
13. DeVries, R. C., General Electric Technical Information Series No. 72CRD178 (1972).Google Scholar
14. Johnson, E. O.. RCA Review, 26 [6]163 (1965).Google Scholar
15. Keyes, R W., Proc. IEEE 60[11[ 225 (1972).Google Scholar
16. Parsons, J. D. in Novel Refractory Semiconductors, edited by Emin, et al. (Mater. Res. Soc. Proc. 97, Pittsburgh, PA 1987) p.271.Google Scholar
17. Yoder, M. N., “Synthetic Diamond, Its Properties and Synthesis,” edited by Emin, et al. Novel Refractory Semiconductors Pittsburgh, PA p. 315.1987 Google Scholar
18. Shenai, K., Scott, R. and Baliga, B. J. in Amrnoh. and Cryst. SIC and Related Materials II. edited by Rahman, , et al. (Springer Verlag, Berlin 1989) p. 135.Google Scholar
19. Shenal, K. and Baliga, B. J. in Diamond and Diamond-Like Films, edited by Dismukes, . et al. (Electrochem. Society Proc. Vol. 89–12, Pennington, NJ 1989) p. 405.Google Scholar
20. Carlos, W. E., Moore, W., Siebenmann, P., Frietas, J. A. Jr., Kaplan, R., Bishop, S. G., Nordquist, P. E. R. Jr., Kong, M., Davis, R. F. in Novel Refractory Semiconductors, edited by Emin, et al. (Mater. Res. Soc. Proc. 97, Pittsburgh, PA 1987) p. 253.Google Scholar
21. Parsons, J. D., Kruaval, G. B. and Vigil, J. A. In Amorph. and Cryst. SiC and Related Materials II, edited by Rahman, , et al. (Springer Verlag, Berlin 1989) p. 171.Google Scholar
22. Edmond, J. A., Das, K. and Davis, R. F., J. Appl. Phys. 63[3] 922 (1988).Google Scholar
23. Pan, W. S. and Steckl, A. J. in Amorph. and Cryst. SIC and Related Materials I, edited by Rahman, , et al. (Springer Verlag, Berlin 1989) p. 217.Google Scholar
24. Palmour, J. W., Kong, H. S., and Davis, R. F., Appl. Phys. Lett 51 [24] 2028 (1987).Google Scholar
25. Parsons, J. D. and Brown, D. W., presented at High Temperature Electronics Workshop, Albuquerque, NM, June 1989 (unpublished).Google Scholar
26. Kelner, G., Shur, M., Binari, S., Sleger, K. and Kong, H. in Amoroh. and Cryst. SIC and Related Materials I, edited by Rahman, , et al. (Springer Verlag, Berlin 1989) p. 184.Google Scholar
27. Kong, H. S., Glass, J. T. and Davis, R F., J. Mat. Res. 4[1] 204 (1989).Google Scholar
28. Collins, A. T., Semicond. Sci. Technol., 4, 605 (1989).Google Scholar
29. Sandhu, G. S., Swanson, M. L. and Chu, W. K., poster presented at Diamond Technology Initiative Symposium, Crystal City, VA, July 1989.Google Scholar
30. Efremow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A., and Economou, N. P., J. Vac. ScL TechnoL B 3(1), 416 (1985).Google Scholar
31. Gels, M. W., Smythe, D. L., McAleese, M. D. and Ehrlich, D., presented at Diamond Technology Initiative Symposium Durham, NC, July 1987 (unpublished).Google Scholar
32. Moazed, K. L., Nguyen, R.. and Zeidler, J. R., IEEE Electron Device Letters, 9 [7] 350 1988.Google Scholar
33. Geis, M. W., Rathman, D. D., Ehrlich, D. J., Murphy, R. A., and Lindley, W. T., IEEE Electron Device Letters, EDL–8(8) (1987).Google Scholar
34. Geis, M. W., Efremow, N. N. and Rathman, D. D., J. Vac. Sci. TechnoL A 6, 1953 (1988).Google Scholar
35. Mishima, O., Tanaka, J., Yamaoka, S. and Fukunaga, O., Science 238, p. 181, 9 October (1987); O. Mishima, K. Era, J. Tanaka and S. Yamaoka. AppL Phys. Lett., 53 [11] 962 (1988).Google Scholar
36. Pelly, B. and Clemente, S., International Rectifier Handbook, Application Note 930A, Data Sheet PD-9.318D.Google Scholar