Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:20:18.862Z Has data issue: false hasContentIssue false
  • English
  • Français

Static Microindentation and Displacement-Sensitive Indentation Tests on Undoped GaAs

Published online by Cambridge University Press:  26 February 2011

Shanling Wang ,
Ming Zhang ,
Jodie Bradby  and
Pirouz Pirouz
Shanling Wang
Affiliation:
[email protected], Case Western Reserve University, Materials Science and Engineering, White Building, 10900 Euclid Ave., Cleveland, Ohio, 44106, United States, 216-3680353
Ming Zhang
Affiliation:
[email protected], Case Western Reserve University, Department of Materials Science and Engineering, United States
Jodie Bradby
Affiliation:
[email protected], Research School of Physical Science and Engineering, The Australian National University, Department of Electronic Materials Engineering, Australia
Pirouz Pirouz
Affiliation:
[email protected], Case Western Reserve University, Department of Materials Science and Engineering, United States
Get access

Abstract

Static microindentation as well as dynamic displacement-sensitive indentation (DSI) tests have been performed between RT and 450°C on the (001) surface of undoped GaAs. In the static tests, the 4-fold symmetry reduces to 2-fold symmetry in some studied range of temperatures. The temperature dependence of the indentation diagonal and the crack length has been measured and, from disappearance of indentation cracks, the indentation brittle-to-ductile transition (IBDT) temperature TIBDT has been estimated. It is found that the temperature at which a transition in the energy density in DSI tests occurs nearly coincides with TIBDT as measured by static indentation tests; for undoped GaAs, both these temperatures are in the range of 200-225°C. This is about 100°C lower than the true brittle-to-ductile temperature TBDT, as measured by 4-point bending tests. The difference between TIBDT and TBDT is explained in terms of the superimposed hydrostatic stress component in the indentation experiments, and the crack asymmetry around the indentations is interpreted in terms of the different mobilities of α and β dislocations in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 904: Symposium BB – Mechanisms of Mechanical Deformation in Brittle Materials , 2005 , 0904-BB05-08
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Warren, P. D., Ph.D. Thesis, University of Oxford, (1986).Google Scholar
2 Wang, S.L., Ph.D. Thesis, Case Western Reserve University, (2005).Google Scholar
3 Kernan, B. D., Ph.D. Thesis, Case Western Reserve University, (2002).Google Scholar
4 Tafto, J., Spence, J. C. H., J. Appl. Cryst., 15, 60–64 (1982).Google Scholar
5 Brown, P. D., Durose, K., Russell, G. J., and Woods, J., J. Crystal. Growth, 101, 211 (1990).Google Scholar
6 Suzuki, T., and Ohmura, T., Phil. Mag. A, 74, 1073–1084 (1996).Google Scholar
7 Ullner, C., Beckmann, J., and Morrell, R. J., Eur. Cer. Soc., 22, 1183–1189 (2002).Google Scholar
8 Suzuki, T., Yasutomi, T., Tokuoka, T., and Yonenaga, I., Phil. Mag. A, 79, 2637–2654 (1999).Google Scholar
9 Largeau, L., Patriarche, G., Le Bourhis, E., Riviere, A., and Riviere, J. P., Phil. Mag. 83, 1653–1673 (2003).Google Scholar