Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T17:50:37.886Z Has data issue: false hasContentIssue false

State-of-the-Art Evaluation of Ultra-Clean Ulsi Processes

Published online by Cambridge University Press:  10 February 2011

A. Fischer-Colbrie
Affiliation:
Hewlett-Packard Labs, Bldg. 26, 3500 Deer Creek Rd., Palo Alto, CA 94304
S. S. Laderman
Affiliation:
Hewlett-Packard Labs, Bldg. 26, 3500 Deer Creek Rd., Palo Alto, CA 94304
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Lab, SLAC MS 69. PO Box 4349, Stanford, CA 94309
S. Ghosh
Affiliation:
Stanford Synchrotron Radiation Lab, SLAC MS 69. PO Box 4349, Stanford, CA 94309
N. Takaura
Affiliation:
Stanford Synchrotron Radiation Lab, SLAC MS 69. PO Box 4349, Stanford, CA 94309
P. Pianetta
Affiliation:
Hewlett-Packard Labs, Bldg. 26, 3500 Deer Creek Rd., Palo Alto, CA 94304
A. Shimazaki
Affiliation:
Toshiba Corp., Kawasaki, Japan
A. Waldhauer
Affiliation:
Applied Materials, 350 Bowers Ave., Santa Clara, CA 95051
D. Wherry
Affiliation:
Kevex, Inc., 855 Veterans Blvd., San Carlos, CA 94070
S. Barkan
Affiliation:
Kevex, Inc., 24911 Avenue Stanford, Valencia, CA 91355
Get access

Abstract

This work describes recent progress in implementation and applications of synchrotron radiation total reflection x-ray fluorescence (SR-TXRF) to measure trace metals on wafer surfaces. To date, we have achieved state-of-the-art transition metal sensitivity of 3×108 atoms/cm2 (˜3fg) for 1000 sec. counting time for impurities which have an monolayer-like distribution on the surface and <1fg for droplet-like impurities. Recent instrumentation breakthroughs include reduction of detector parasitic backgrounds (particularly Cu) to below our present detection limit, 150 and 200mm whole-wafer handling, wafer-mapping capability and a cleanroom mini-environment. With these upgrades, measurements were made of wafers from various steps in the integrated circuit fabrication process. These results demonstrate that synchtron radiation brings TXRF into a new and useful regime. Further developments are underway to increase throughput and access for broader application.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Laderman, S.S., Bull. Am. Phys. Soc., 39, 514 (1994).Google Scholar
2. Pianetta, P., Brennan, S., Takaura, N., Tompkins, H., Fischer-Colbrie, A., Laderman, S., Wherry, D. and Madden, M., Rev. Sci. Instrum. 66, pp. 12931297, (1995).10.1063/1.1145957CrossRefGoogle Scholar
3. Fischer-Colbrie, A., Laderman, S. S., Brennan, S., Takaura, N., Pianetta, P., Shimazaki, A., Miyazaki, K., Kortright, J. and Wherry, D. C., Proceedings of the Second International Symposium on Ultra-Clean Processing of Si Surfaces, ed. by Heyns, M., p.57, Acco, Leuven/Amersfoort, 1994.Google Scholar
4. Laderman, S. S., Fischer-Colbrie, A., Shimazaki, A., Miyazaki, K., Brennan, S., Takaura, N., Pianetta, P. and Kortright, J. B., Analytical Sciences 11, p. 515 (1995).10.2116/analsci.11.515CrossRefGoogle Scholar
5. Takaura, N., Brennan, S., Pianetta, P., Laderman, S. S., Fischer-Colbrie, A., Kortright, J. B., Wherry, D. C., Miyazaki, K. and Shimazaki, A., Advances in X-ray Chemical Analysis JAPAN 26, p. 113 (1995).Google Scholar
6. Bertin, P., Principles of X-ray Spectrometric Analysis (Plenum, New York, 1975).CrossRefGoogle Scholar
7. Shimazaki, A., Electrochem. Soc. Symp. Proc. for Defects in Si II, Wash D.C. May 5–10, 1991; ECS vol. 91– 9, 47 (1991).Google Scholar
8. Shimazaki, A., private comm. (1996).Google Scholar
9. Huber, A., Rath, H.J., and Eichinger, P., ECS Extended Abstracts vol. 88–20 Abstract 422, pp. 19–620 (1988).Google Scholar
10. Fischer-Colbrie, A., Laderman, S.S., Brennan, S., Ghosh, S., Takaura, N., Pianetta, P. and Cornelissen, I., to be submitted to J. Appl. Phys.Google Scholar