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Stabilization of Hydrogen‐Free Cvd‐ Sio2 Films

Published online by Cambridge University Press:  10 February 2011

Y. Uchida ,
S. Takei  and
M. Matsumura
Y. Uchida
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science and Technology, Uenohara‐machi, Kitatsuru‐gun, Yamanashi 409–01, JAPAN, [email protected]
S. Takei
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science and Technology, Uenohara‐machi, Kitatsuru‐gun, Yamanashi 409–01, JAPAN, [email protected]
M. Matsumura
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science and Technology, Uenohara‐machi, Kitatsuru‐gun, Yamanashi 409–01, JAPAN, [email protected] Department of Physical Electronics, Tokyo Institute of Technology, O‐okayama, Meguro‐ku, Tokyo 152, JAPAN
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Abstract

Annealing effects have been investigated for the SiO2 films deposited from a Tetra‐Iso‐Cyanate‐Silane and Tertiary‐Alkyl‐Amine gas mixture in order to stabilize its desirable hydrogen‐free property. It was found that O3 annealing eliminates effectively the NCO‐group from the deposited film, resulting in the improved water resistance characteristics, and that HF changes the Si‐NCO bonds to Si‐F bonds resulting also in improved film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 21
Copyright
Copyright © Materials Research Society 1997

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References

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