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Stability Of Thin Film Amorphous Metal Alloys

Published online by Cambridge University Press:  26 February 2011

F. W. Saris ,
L. S. Hung ,
M. Nastasi  and
J. W. Mayer
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 109B SJ, Amsterdam, The, Netherlands
L. S. Hung
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
M. Nastasi
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
J. W. Mayer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
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Abstract

Thermal stability of self supporting amorphous films is reviewed in terms of a simple kinetic model. A semi-empirical relationship between the crystallization temperature and the heat of hole formation is applicable only for systems with negative heat of mixing.

Interaction of amorphous diffusion barriers with Si substrates and Al overlayers is also reviewed for near noble-refractory alloys. If their crystallization temperature is higher than their reaction temperature, there is no correlation between the two parameters. The reaction takes place when the annealing temperature reaches a value at which compounds can be formed of both constituents of the alloy. Finally, comparison is made to reactions of crystalline alloys with Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 81
Copyright
Copyright © Materials Research Society 1986

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References

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