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Stability Of Silicon-Oxygen-Fluorine And Carbon-Fluorine LOW-K DIELECTRICS WITH RESPECT TO ATTACK BY WATER

Published online by Cambridge University Press:  10 February 2011

H. Yang  and
G. Lucovsky
H. Yang
Affiliation:
Department of Chemistry, Box 8204, [email protected], North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, Materials Science and Engineering and Electrical and Computer Engineering, Box 8202, [email protected], North Carolina State University, Raleigh, NC 27695
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Abstract

Ab initio configuration interaction calculations have been previously used to account for the relatively large decreases in the static dielectric constant of Si-O-F alloys with low alloy concentrations of F-atoms, ∼ 22%for F concentrations of ∼ 10 at.%. The present study addresses the stability of these alloy films and carbon-fluorine films with respect to attack of Si-F bonds or C-F bonds by water molecules. The present calculations show that the reaction: H20 + 2 Si-F - 2 HF + Si-O-Si is exothermic by about 0.7 eV. However, the reaction of H20 + 2 C-F - 2 HF + CO-C is calculated to be endothermic by 1.6 eV. Our calculations focus on the reaction energetics and geometries as a function of the distance between the F-atoms of the Si-F and C-F groups and water molecule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 371
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

(1) Lucovsky, G. and Yang, H., J. Vac. Sci. Technol. A 15, 836 (1997).Google Scholar
(2) Lim, S. W., Shimogaki, Y., Nakano, Y., Tada, K., and Komiyama, H., Extended Abstracts of the 1995 International Conference on Solid State Device and Materials (Business Center for Academic Societies Japan, Tokyo, 1995), p. 153.Google Scholar
(3) Lim, S. W., Shimogaki, Y., Nakano, Y., Tada, K., and Komiyama, H., Jpn. J. Appl. Phys. 135, 1468 (1996).Google Scholar
(4) Theil, J. A., Tsu, D. V., Kim, S. S., and Lucovsky, G., J. Vac. Sci. Technol. A 8, 1374 (1990).Google Scholar
(5) Whitten, J. L. and Yang, H., Int. J. Quant. Chem., Quantum Chem. Symp. 29, 41 (1995).Google Scholar
(6) Whitten, J. L. and Yang, H., Surf. Sci. Reports 24, 55 (1996).Google Scholar
(7) Dunning, T. H. Jr, and Hay, P. J., in Methods of Electronic Structure Theory, edited by Schafer, H. F. III (Plenum, New York, London, 1977), Vol.3, pp. 1–27.Google Scholar
(8) Chattopadhyay, A., Madhavan, P. V., Whitten, J. L., Fischer, C. R., and Batra, I. P., J. Mol. Struct. (Theochem) 163, 63 (1988).Google Scholar
(9) Whitten, J. L., J. Chem. Phys. 44, 359 (1966).Google Scholar
(10) Jing, Z., Whitten, J. L., and Lucovsky, G., Phys. Rev. B 45, 13978 (1992).Google Scholar
(11) Srinivasan, E., Yang, H., and Parsons, G. N., J. Chem. Phys. 105, 5467 (1996).Google Scholar