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STABILITY OF SI-DOPED AlGaAs/GaAs MODFET STRUCTURES DURING CONVENTIONAL FURNACE AND RAPID OPTICAL ANNEALING.

Published online by Cambridge University Press:  28 February 2011

J. K. ABROKWAH ,
H. HIBBS ,
R. R. DANIELS  and
P. JOSLYN
J. K. ABROKWAH
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
H. HIBBS
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
R. R. DANIELS
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
P. JOSLYN
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
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Abstract

The use of an AlGaAs/n-GaAs superlattice in place of the n-AlGaAs layer in MODFET devices reduces the light and temperature sensitivity of the threshold voltage. This paper considers the stability of Si doped superlattices under annealing conditions required for activation of the implant in the self-aligned gate MODFET fabrication process. Rapid optical annealing does not significantly degrade the superlattice structure. The DX center concentration in the superlattice structures is a factor of 30 less than measured in conventional MODFET structures. High performance MOOFET devices have been fabricated using the self-aligned gate process with rapid optical annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 301
Copyright
Copyright © Materials Research Society 1986

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