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Stability of Ruthenium-Silica Bilayer Structures

Published online by Cambridge University Press:  15 February 2011

Zara Weng-Sieh ,
Tai. D. Nguyen  and
Ronald Gronsky
Zara Weng-Sieh
Affiliation:
Department of Materials Science & Mineral Engineering, University of California Berkeley and Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720.
Tai. D. Nguyen
Affiliation:
Center for X-ray Optics, Lawrence Berkeley Laboratory, Berkeley, CA 94720.
Ronald Gronsky
Affiliation:
Department of Materials Science & Mineral Engineering, University of California Berkeley and Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720.
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Abstract

The microstructural evolution of ruthenium-silicon dioxide bilayer structures upon annealing is studied using transmission electron microscopy. SiO2/Ru/SiO2 structures, with thicknesses of 2/1/2 nm, 4/2/4 nm, 8/4/8 nm, and 20/10/20 nm, are formed by magnetron sputtering and annealed at 300 or 600°C. As-deposited films have grain sizes on the order of the Ru film thickness. After annealing at 600°C, significant grain growth is observed for all thicknesses, such that the final grain sizes are approximately 3 to 20x greater than the original film thickness. The largest increase in the average Ru grain size is observed for the 2 nm thick ruthenium film possibly due to the coalescence of Ru grains. The coalescence of the Ru particles in the 1 and 2 nm thick films results in the formation of lamellar Ru grains, which disrupts the contiguity of the Ru film. In all other cases, the increase in grain size is attributed to normal grain growth, but the formation of anomalous spherical grains is also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 149
Copyright
Copyright © Materials Research Society 1994

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References

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