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Stability of Multilayered Semiconductor Systems

Published online by Cambridge University Press:  16 February 2011

Y. Kim  and
A. Ourmazd
Y. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
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Abstract

We have studied the atomic scale relaxation of multilyered semiconductor systems through interdiffusion, and its implications for layer and hence device stability. Our technique combines chemical lattice imaging and vector pattern recognition to measure interdiffusion coefficients as small as 10-20 cm2/s at single AiGaAs/GaAs interfaces. Our results can be summarized as follows. (a) The interdiffusion coefficient and hence layer stability depend strongly on the distance from the top surface. (b) The strong influence of the surface stems from its role as the source of rative point defects (interstitials, vacancies) involved in the diffusion process. (c) The study of the initial transients in the diffusion process can directly yield the migration and formation energies of these defects as a function of their charge state. (d) The non-linear nature of the diffusion process can have serious consequences for the low temperature stability of multilayered materials and devices. We also discuss the implications of our results for the design and fabrication of stable multilayered systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 101
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Kim, Y., Ourmazd, A., Feldman, R.D., Rentshler, J.A., Taylor, D.W. and Austin, R.F., MRS Sypm. Proc. Vol.144 163 (1988, Boston) Edited by Sadana, D.K., et al.Google Scholar
2. Kim, Y., Ourmazd, A., Bode, M. and Feldman, R.D., Phys. Rev. Lett. 63 636 (1989).10.1103/PhysRevLett.63.636Google Scholar
3. Deppe, D.G. and Holonyak, N. Jr., J. Appl. Phys. 64 R93 (1988).10.1063/1.341981Google Scholar
4. Ourmazd, A., Tsang, W.T., Rentschler, J.A., and Taylor, D.W., Appl. Phys. Lett. 50 1417 (1987).10.1063/1.97840Google Scholar
5. Ourmazd, A., Taylor, D.W., Cunningham, J. and Tu, C.W., Phys. Rev. Lett. 62 933 (1989).10.1103/PhysRevLett.62.933Google Scholar
6. Press, W.H., Flannery, B.P., Teukolsky, S.A. and Vetterling, W.T., Numerical Recipes (Cambridge University Press, Cambridge, 1986), chapter 14.Google Scholar
7. Kim, Y., Ourmazd, A., and Feldman, R.D., J. Vac. Sci. Technol. A 8(2) 1116 (1990).10.1116/1.576971Google Scholar
8. Guido, L.J., Holonyak, N. Jr.,Hsieh, K.C., and Baker, J.E., Appl. Phys. Lett. 54(3) 262 (1989).10.1063/1.100984Google Scholar