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The Stability of Ion Projection Lithography Masks

Published online by Cambridge University Press:  25 February 2011

J. N. Randall ,
D. Bellavance  and
R. Sivasankar
J. N. Randall
Affiliation:
Texas Instruments Inc., M/S 957 13500 N. Central Expressway, Dallas, Texas 75081
D. Bellavance
Affiliation:
Texas Instruments Inc., M/S 957 13500 N. Central Expressway, Dallas, Texas 75081
R. Sivasankar
Affiliation:
Texas Instruments Inc., M/S 957 13500 N. Central Expressway, Dallas, Texas 75081
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Abstract

Ion projection lithography (IPL) has demonstrated the ability to replicate high resolution patterns with very short exposure times. Computer modeling of masks used in a hypothetical IPL system Is accomplished to estimate mask distortion during fabrication and exposure. Radiation cooling is shown to play an important role in temperature control. Two different methods of mask temperature control are examined. Results suggest a high degree of pattern stability can be expected from this type of mask.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 73
Copyright
Copyright © Materials Research Society 1987

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References

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