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Stability of Heavily Doped Si Formed by As+ Implantation and Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

Muhammad Z. Numan ,
Z. H. Lu ,
W. K. Chu ,
D. Fathy  and
J. J. Wortman
Muhammad Z. Numan
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Phillips Hall 039 A, Chapel Hill, NC 27514
Z. H. Lu
Affiliation:
Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing Radiation Center, China
W. K. Chu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Phillips Hall 039 A, Chapel Hill, NC 27514
D. Fathy
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
J. J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

Deactivation of ion implanted and rapid thermal annealed (RTA) metastable arsenic in silicon during subsequent furnace annealing has been studied by sheet resistance measurement, Rutherford backs cat t ering/ channeling (RBS), and transmission electron microscopy (TEM). Following RTA, thermal annealing induces deactivation of the dopant which increases the sheet resistivity monotonically with temperature for a very short time, Dislocation loops are formed near the peak of As concentration at post-anneal temperatures of 750°C or higher, where deactivation rate is fast. At lower temperatures deactivation is accompanied by displacement of As atoms, possibly forming clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 31
Copyright
Copyright © Materials Research Society 1986

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