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Stability of Amorphous Silicon Thin Film Transistors for Analog Circuit Applications

Published online by Cambridge University Press:  15 February 2011

R. I. Hornsey ,
T. Mahnke ,
P. Madeira ,
K. Aflatooni  and
A. Nathan
R. I. Hornsey
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L3G1
T. Mahnke
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L3G1
P. Madeira
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L3G1
K. Aflatooni
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L3G1
A. Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L3G1
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Abstract

Analog circuits using amorphous silicon thin film transistors offer significant advantages for in situ signal processing in large-area optical and x-ray imagers. However such circuits are susceptible to gate-bias-induced shifts in the threshold voltages of the constituent transistors. In this work, the change of threshold voltage for devices undergoing cycles of stress, relaxation and reverse bias is measured in order to determine the feasibility of resetting the threshold voltage electrically. It is concluded that, although the reverse bias does assist the recovery of the threshold voltage, the process is still not sufficiently rapid. An analog amplifier circuit is then described which uses negative feedback to achieve a gain that is stable to within 6% over a period of 8 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 887
Copyright
Copyright © Materials Research Society 1997

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References

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