Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-03T02:06:25.366Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability and Conductivity of Gd2((Mo1/3Mn2/3)xTi1-x)2O7

Published online by Cambridge University Press:  10 February 2011

J. J. Sprague ,
O. Porat  and
H. L. Tuller
J. J. Sprague
Affiliation:
Crystal Physics and Electroceramics Laboratory, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
O. Porat
Affiliation:
Crystal Physics and Electroceramics Laboratory, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
H. L. Tuller
Affiliation:
Crystal Physics and Electroceramics Laboratory, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
Get access

Abstract

A composite solid state electrochemical device, with (Gd1-xCax)2Ti2O7 serving as the electrolyte and Gd2(Ti1-xMox)2O7 (GT-Mo) as the anode has recently been proposed. The latter exhibits high levels of mixed conduction under reducing atmospheres, but decomposes at high Po2. We have recently succeeded in extending the stability limits of the GT-Mo to higher Po2 with the addition of Mn. In this study, we report on the conductivity and stability of Gd2((Mo13Mn2/3)xTi1-x)207 (GMMT) as a function of Po2, T, and composition utilizing impedance spectroscopy and x-ray diffraction. The addition of Mn extends the stability region of the material to Po2 = 1 atm with little change in the magnitude of the conductivity. Defect models explaining the dependence of the conductivity on oxygen partial pressure are presented. Preliminary results from the use of an electronic blocking sandwich cell used to isolate the ionic conductivity of GMMT are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 321
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tuller, Harry L., Kramer, Steve A., Spears, Marlene A., Patent, U.S. No. 5,403,461 (4 April, 1995).Google Scholar
2. Tuller, Harry L., Kramer, Steve A., Spears, Marlene A., and Pal, Uday A., U.S. Patent No. 5,509,189 (23 April, 1996).Google Scholar
3. Tuller, H. L., in High Temperature Electrochemistry: Ceramics and Metals, edited by Poulsen, F. W., Bonanos, N., Linderoth, S., Mogensen, M., and Zachau-Christiansen, B. (Risø National Laboratory, Roskilde, Denmark, 1996), pp. 139–135.Google Scholar
4. Kramer, S., Tuller, H. L., Solid State Ionics, 82, 15 (1995).Google Scholar
5. Tuller, H. L., Kramer, S., Spears, M. A., in High Temperature Electrochemical Behavior of Fast Ion and Mixed Conductors, edited by Poulson, F. W., Bentzen, J. J., Jacobsen, T., Skou, E., and Ostergard, M. J.L. (Rise National Laboratory, Roskilde, Denmark, 1993), pp. 151–173.Google Scholar
6. Porat, O., Heremans, C., Tuller, H.L., Solid State Ionics, 94, 75 (1997).Google Scholar
7. Pechini, M. P., U.S. Patent No. 3,330,697 (11 July, 1967).Google Scholar
8. Porat, O. and Tuller, H. L., Journal ofElectroceramics, 1, 41 (1997).Google Scholar
9. Wang, Shyh, Fundamentals of Semiconductor Theory and Device Physics. 1989, Prentice Hall, New Jersey, 1989, p. 207.Google Scholar
10. Kharton, V. V., Naumovich, E.N., Vecher, A.A., and Nikolaev, A.V., Journal of Solid State Chemistry, 120, 128 (1995).Google Scholar