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SrTiO3 and (Ba,Sr)TiO3 Thin Films Preparation by Ion Beam Sputtering and Their Dielectric Properties

Published online by Cambridge University Press:  25 February 2011

Shintaro Yamamichi ,
Toshiyuki Sakuma ,
Takashi Hase  and
Yoichi Miyasaka
Shintaro Yamamichi
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
Toshiyuki Sakuma
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
Takashi Hase
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
Yoichi Miyasaka
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
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Abstract

SrTiO3 and (Ba,Sr)TiO3 thin films have been prepared by ion beam sputtering on Pd coated sapphire substrates. Film compositions were almost the same as target compositions when powder targets were used. Capacitance-voltage characteristics depended on Sr/Ti ratio of the SrTiO3 films. Only small changes of capacitance value were observed in the range from -3V to 3V when the Sr/Ti ratio was 1.0. Compared with rf-magnetron sputtered film, ion beam sputtered SrTiO3 film indicated lower leakage current density in 50nm thickness. In (Bax,Sr1-x)TiO3 thin films, dielectric constant changed with Ba content (x) and showed a maximum at x=0.5. It also changed with the firing temperature of target powder. The highest value was obtained by using the target powder fired at 900°C. A 100nm thick (Ba0.5,Sr0.5)TiO3 thin film indicated a dielectric constant value of 320.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 297
Copyright
Copyright © Materials Research Society 1992

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References

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