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SPV Monitoring of Near Surface Doping – Role of Boron-Hydrogen Interaction; Boron Passivation and Reactivation

Published online by Cambridge University Press:  21 March 2011

D. Marinskiy  and
J. Lagowski
D. Marinskiy
Affiliation:
Semiconductor Diagnostics, Inc., 3650 Spectrum blvd., Ste 130 Tampa, FL 33612, U.S.A.
J. Lagowski
Affiliation:
Semiconductor Diagnostics, Inc., 3650 Spectrum blvd., Ste 130 Tampa, FL 33612, U.S.A.
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Abstract

Hydrogen is known to cause the passivation of boron acceptors after such processing steps as wet etching, reactive ion etching, sputter deposition of metal contacts, and Ar ion beam etching. Previous studies of this effect employed CV profiling, spreading resistance profiling, and SIMS measurements on samples diffused with deuterium. These methods are either destructive to the Si surface or require deposition of metal contact. In the present study we used a non-contact small signal ac-surface photovoltage technique, currentlyavailable in commercial diagnostic tools. Simultaneous measurements of the semiconductor surface barrier, Vsb, and the capacitance of the surface depletion layer, CD, give the concentration of boron acceptors in a submicron distance from the Si surface or Si/SiO2 interface. The technique has proven very successful in monitoring low dose implants and also near surface doping in oxidized wafers. Inbare silicon wafers the method occasionally indicated surface boron concentration noticeably below the bulk value. We found such behavior in wafers after the chemical cleaning, used to prepare a hydrogen terminated surface. Thermal annealing at temperatures from 150°C to 200°C reactivates the boron dopant. We will discuss the effect of various cleaning and annealing conditions on passivation and reactivation of boron acceptors in the near surface region. The results obtained with the non-contact SPV technique show excellent agreement with previous studies. They also provide a basis for reliable measurement of the boron concentration free of interference from hydrogen passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J2.5
Copyright
Copyright © Materials Research Society 2001

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References

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