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Sputtered Barium Titanate Films for Capacitor Applications

Published online by Cambridge University Press:  10 February 2011

Bang Hung Tsao ,
Sandra Fries Carr  and
Joseph A. Weimer
Bang Hung Tsao
Affiliation:
K Systems Corp., Dayton OH 45432, [email protected]
Sandra Fries Carr
Affiliation:
U.S. Air Force, WL/POOC, Wright‐Patterson Air Force Base OH 45433, carrsj @ wl.wpafb.af.mil
Joseph A. Weimer
Affiliation:
U.S. Air Force, WL/POOC, Wright‐Patterson Air Force Base OH 45433, carrsj @ wl.wpafb.af.mil
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Abstract

BaTiO3 films prepared by RF sputtering was studied for capacitor applications. Some films produced have a capacitance storage of 0.85 μF/cm2, a high resistivity of 1014 ω‐cm, and a low dissipation factor of 0.005. The dielectric constant of these BaTi03 films were approximately 10 to 30, which is superior to that of the typical polymer film capacitor and had little dependence on frequency. However the breakdown strength of BaTi03 was approximately 5MV/meter. The theoretical breakdown strength of BaTi03 is reported to be as high as 200MV/m. The processing parameters of BaTi03 films must be optimized to obtain the potential benefit of the BaTi03.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 343
Copyright
Copyright © Materials Research Society 1997

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References

1 McClure, D. J. and Crowe, J. R., “Characterization of Amorphous Barium Titanate Films Prepared by RF Sputtering,” J. Vac. Sci. Technol, Vol. 16, 1979, pp. 311‐314.Google Scholar
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