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The Sputter Deposition of Metal Multilayers

Published online by Cambridge University Press:  25 February 2011

R. E. Somekh ,
R. J. Highmore ,
K. Page ,
R. J. Home  and
Z. H. Barber
R. E. Somekh
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 SQZ, UK.
R. J. Highmore
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 SQZ, UK.
K. Page
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 SQZ, UK.
R. J. Home
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 SQZ, UK.
Z. H. Barber
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 SQZ, UK.
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Abstract

We describe the strategy that we are using to make precision metal multilayers. Differential scanning calorimetry has been used with the Ni/Zr system to study the abruptness of the interface as a function of the sputtering pressure. For 10nm period multilayers there is a monotonic increase in the width of the interface with increasing sputtering pressure. W/Si multilayers have been studied as a function of both the sputtering pressure and the relative thicknesses of tungsten and silicon. At reasonably low sputtering pressures a well textured (110) tungsten X-ray peak is seen which is compatible with the expected thickness of the tungsten layers.

Finally, we report some preliminary work on sputtering from tungsten and silicon targets which are at different distances from the substrate so that the degrees of bombardment on the growing layers of the film can be independently varied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 29
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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