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SPM Characterization of Substrate Surfaces Prepared for Carbon-Related-Film Deposition

Published online by Cambridge University Press:  15 March 2011

Kazumasa Narumi ,
Shunya Yamamoto  and
Hiroshi Naramoto
Kazumasa Narumi
Affiliation:
Takasaki Branch, Advanced Science Research Center, JAERI, 1233 Watanuki-machi, Takasaki, Gunma, 370-1292, Japan
Shunya Yamamoto
Affiliation:
Department of Materials Development, JAERI, 1233 Watanuki-machi, Takasaki, Gunma, 370-1292, Japan
Hiroshi Naramoto
Affiliation:
Takasaki Branch, Advanced Science Research Center, JAERI, 1233 Watanuki-machi, Takasaki, Gunma, 370-1292, Japan
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Abstracts

Variation of surface steps on sapphire (0001) and (1120) substrates processed with thermal annealing in air or a reducing environment at 1000 to 1400°C for 1 to 10 hours were investigated with an atomic force microscope (AFM). The annealed (0001) surfaces consist of atomically smooth and large terraces and atomic-height steps, whose configurations strongly depend on annealing conditions. On the (1120) surfaces, where crystallographic misorientation is almost an order of magnitude larger than that of the (0001) surfaces, step height and terraces increase in size with the longer annealing time and higher annealing temperature. Characteristic step figures due to the symmetry of atomic arrangement were observed on the (0001) surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O8.4
Copyright
Copyright © Materials Research Society 2000

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References

1. Angus, J. C., Will, H. A. and Stanko, W. S., J. Appl. Phys., 39, 2915 (1968).Google Scholar
2. Hayashi, K., Yamanaka, S., Watanabe, H., Sekiguchi, T., Okushi, H. and Kajimura, K., J. Cryst. Growth, 183, 338–346 (1998).Google Scholar
3. Suzuki, T. and Argoitia, A., Phys. Stat. Sol. (a), 154, 239–254 (1996).Google Scholar
4. For example, Nakamura, S., Senoh, M. and Mukai, T., Appl. Phys. Lett., 62, 2390–2392 (1993).Google Scholar
5. Yoshimoto, M., Yoshida, K., Maruta, H., Hishitani, Y., Koinuma, H., Nishio, S., Kakihana, M. and Tachibana, T., Nature, 399, 340–342 (1999)Google Scholar
6. Yoshimoto, M., Maeda, T., Ohnishi, T., Koinuma, H., Ishiyama, O., Shinohara, M., Kubo, M., Miura, R. and Miyamoto, A., Appl. Phys. Lett., 67, 2615–2617 (1995).Google Scholar