Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-20T01:36:21.635Z Has data issue: false hasContentIssue false

Spm Based Lithography for Nanometer Scale Electrodes Fabrication

Published online by Cambridge University Press:  10 February 2011

A. Notargiacomo
Affiliation:
Instituto di Elettronica dello Stato Solido (IESS), CNR, Roma, Italy
E. Giovine
Affiliation:
Unità INFM, Dip. di Fisica “E. Amaldi”, Università di Roma TRE, Roma, Italy
E. Cianci
Affiliation:
Osservatorio Astronomico di Roma, Monteporzio Catone, Italy, [email protected]
V. Foglietti
Affiliation:
Instituto di Elettronica dello Stato Solido (IESS), CNR, Roma, Italy
F. Evangelisti
Affiliation:
Instituto di Elettronica dello Stato Solido (IESS), CNR, Roma, Italy Unità INFM, Dip. di Fisica “E. Amaldi”, Università di Roma TRE, Roma, Italy
Get access

Abstract

Scanning probe assisted nanolithography is a very attractive technique in terms of low-cost, patterning resolution and positioning accuracy. Our approach makes use of a commercial atomic force microscope and silicon probes to build simple nanostructures, such as metal electrode pairs, for application in novel quantum devices.

Sub-100 nm patterning was successfully performed using three different techniques: direct material removal, scanning probe assisted mask patterning and local oxidation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Wilder, K. and Quate, C. F., Appl. Phys. Lett. 73, 2527 (1998).Google Scholar
2.Mamin, H. J., Appl. Phys. Lett. 69, 433 (1996).Google Scholar
3.Campbell, P. M., Snow, E. S. and McMarr, P. J., J. Appl. Phys. 84, 1776 (1995).Google Scholar
4.Fontaine, P. A., Dubois, E. and Stievenard, D., Appl. Phys. Lett. 73, 2527 (1998).Google Scholar
5.Magno, R. and Bennett, B. R., Appl. Phys. Lett. 70, 1855 (1997).Google Scholar
6.Bruckl, H., Rank, R., Vinzelberg, H., Monch, I., Kretz, L. and Reiss, G., Surf. and Interface Anal. 25, 611 (1997).Google Scholar
7.Hu, S., Altmeyer, S., Hamidi, A., Spangenberg, B. and Kurz, H., J. Vac. Sci. Technol. B 16, 1983 (1998).Google Scholar
8. S. Hu S, Hamidi, A., Altmeyer, S., Koster, T., Spangenberg, B. and Kurz, H., Vac. Sci. Technol. B 16, 2822 (1998).Google Scholar
9.Rangelow, I. W. and Löschner, H.J. Vac.Sci. Technol. B 13, 2394 (1995).Google Scholar
10.Snow, E. S., Park, D. and Campbell, P. M., Appl. Phys. Lett. 69, 169 (1996).Google Scholar
11.Schwartz, G. C. and Platter, V., J. Electrochem. Soc. 122, 1508 (1975).Google Scholar