Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:45:35.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Spintronics in Nitrides

Published online by Cambridge University Press:  01 February 2011

Tomasz Dietl
Tomasz Dietl*
Affiliation:
Laboratory for Cryogenic and Spintronic Research, Institute of Physics, Polish Academy of Sciences and ERATO Semiconductor Spintronics JST Project, al. Lotników 32/46, PL 02–668 Warszawa, Poland; also Chair of Condensed Matter Physics, Institute of Theoretical Physics, Warsaw University, ul. Hoża 69, PL 00 581 Warszawa, Poland.
Get access

Abstract

The report of progress in studies of magnetism in the group III nitrides doped with transition metals and rare earth elements is described taking into account conclusions stemming from the recent advances in understanding of Ga1−xMnxAs, GaAs:MnAs, and related systems. The actual position of magnetic impurities in the host lattice as well as a possible role of structural, atomic, and electronic phase separation is described. The question whether the hole introduced by the Mn impurities is localized tightly on the Mn d-levels or rather on the hybridized p-d bonding states is addressed. The nature of spin-spin interactions and magnetic phases, as provided by theoretical and experimental findings, is outlined, and possible origins of high and low temperature ferromagnetism observed in these systems is discussed. Finally, the suitability of nitrides for single spin manipulation is analyzed considering linear in k spin splitting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E9.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. see, e.g., Ohno, H., Matsukura, F., F., , and Ohno, Y., Y., , JSAP International 5, 4 (2002);Google Scholar
Dietl, T., Acta Phys. Polon. A 100 (suppl.), 139 (2001);Google Scholar
Wolf, S., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., von Molnár, S., Roukes, M.L., Chtchelkanova, A.Y., D.M., and Treger, , Science 294, 1488 (2001);Google Scholar
Žutić, I., Fabian, J., and Das Sarma, S., Rev. Mod. Phys. 76, 323 (2004).Google Scholar
2. see, e.g., Dietl, T. and Ohno, H., MRS Bulletin, Oct. 2003, p. 714 Google Scholar
Dietl, T., in: Proceedings 27th International Conference on Physics of Semiconductors, Flagstaff, Arizona, 2004, ed. Mendez, E. (AIP Proceedings), in press; cond-mat/0408561, and REFERENCES therein.Google Scholar
3. Wang, K.Y., Campion, R.P., Edmonds, K.W., Sawicki, M., Dietl, T., Foxon, C.T. and Gallagher, B.L., in: Proceedings 27th International Conference on Physics of Semiconductors, Flagstaff, Arizona, 2004, ed. Mendez, E. (AIP Proceedings), in press; cond-mat/0411475.Google Scholar
4. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000);Google Scholar
Dietl, T., Ohno, H., and Matsukura, F., Phys. Rev. B 63, 195205 (2001).Google Scholar
5. Dietl, T., Semicond. Sci. Technol. 17, 377 (2002), and REFERENCES therein.Google Scholar
6. Pearton, S. J., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Norton, D. P., Theodoropoulou, N., Hebard, A.F., Park, Y.D., Ren, F., Kim, J., and Boatner, L.A., J. Appl. Phys. 93, 1 (2003).Google Scholar
7. Dietl, T., phys. stat. solidi (b) 240, 433 (2003).Google Scholar
8. Prellier, W., Fouchet, A., and Merce, B., J. Phys.: Cond. Matter 15, R1583 (2003).Google Scholar
9. Dietl, T., Nature Mat. 2, 646 (2003).Google Scholar
10. Asahi, H., Zhou, Y. K., Hashimoto, M., Kim, M. S., Li, X. J., Emura, S., and Hasegawa, S., J. Phys.: Condens. Matter 16, S5555 (2004), and REFERENCES therein.Google Scholar
11. see, e.g., Sato, K. and Katayama-Yoshida, H., Semicond. Sci. Technol. 17, 367 (2002), and REFERENCES therein.Google Scholar
12. Mahadevan, P. and Zunger, A., cond-mat/0409296.Google Scholar
13. Liu, H. X., Wu, S.Y., Singh, R.K., Gu, Lin, Smith, D.J., Newman, N., Dilley, N.R., Montes, L., and Simmonds, M.B., Appl. Phys. Lett. 85, 476 (2004).Google Scholar
14. Venkatesan, M., Fitzgerald, C.B., and Coey, J.M.D., Nature 430, 630 (2004).Google Scholar
15. Ploog, K.H. et al., private communication (2004).Google Scholar
16. see, e.g., Höhne, R., Han, K.-H., Esquinazi, P., Setzer, A., Semmelhack, H., Spemann, D., and Butz, T., J. Magn. Magn. Materials 272–276, E839 (2004).Google Scholar
17. Zaja¸c, M., Gosk, J., Grzanka, E., Kamińska, M., Twardowski, A., Strojek, B., Szyszko, T., and Podsiadło, S., J. Appl. Phys. 93, 4715 (2003).Google Scholar
18. Dhar, S., Brandt, O., Trampert, A., Friedland, K.J., Sun, Y.J., and Ploog, K.H., Phys. Rev. B 67, 165205 (2003).Google Scholar
19. Kolesnik, S., Dabrowski, B., and Mais, J., J. Appl. Phys. 95, 2582 (2004).Google Scholar
20. Rader, O., Pampuch, C., Shikin, A.M., Gudat, W., Okabayashi, J., Mizokawa, T., Fujimori, A., Hayashi, T., Tanaka, M., Tanaka, A., and Kimura, A., Phys. Rev. B 69, 075202 (2004).Google Scholar
21. Dietl, T., Matsukura, F. and Ohno, H., Phys. Rev. B 66, 033203 (2002).Google Scholar
22. Dietl, T., König, J., and MacDonald, A.H., Phys. Rev. B 64, 241201(R) (2001).Google Scholar
23. Jungwirth, T., König, J., Sinova, J., Kučera, J., and MacDonald, A.H., Phys. Rev. B 66, 012402 (2002).Google Scholar
24. König, J., Schliemann, J., Jungwirth, T., and MacDonald, A.H., Electronic Structure and Magnetism of Complex Materials, eds. Singh, D.J. and Papaconstantopoulos, D.A. (Springer Berlin, 2002).Google Scholar
25. Sinova, J., Jungwirth, T., and Černe, J., e-print: cond-mat/0402568.Google Scholar
26. Sato, K., Dederichs, P.H., Katayama-Yoshida, H., and Kudrnovský, J., J. Phys.: Condens. Matter 16 S5491 (2004), and REFERENCES therein.Google Scholar
27. Wierzbowska, M., Sanchez-Portal, D., and Sanvito, S., e-print: cond-mat/0406464, and REFERENCES therein.Google Scholar
28. Dakhama, A., Lakshmi, B., and Heiman, D., Phys. Rev. B 67, 115204 (2003).Google Scholar
29. Van de Walle, C.G. and Neugebauer, J., Nature 423, 626 (2003).Google Scholar
30. Mizokawa, T., Nambu, T., Fujimori, A., Fukumura, T., and Kawasaki, M., Phys. Rev. B 65, 085209 (2002).Google Scholar
31. Mizokawa, T. and Fujimori, A., Phys. Rev. B 48, 14150 (1993).Google Scholar
32. Wolos, A., Kaminska, M., Palczewska, M., Twardowski, A., Liu, X., Wojtowicz, T., and Furdyna, J. K., J. Appl. Phys. 96, 530 (2004).Google Scholar
33. Yu, K.M., Walukiewicz, W., Wojtowicz, T., Kuryliszyn, I., Liu, X., Sasaki, Y., and Furdyna, J.K., Phys. Rev. B 65, 201303(R) (2002).Google Scholar
34. Edmonds, K.W., Bogusławski, P., Gallagher, B.L., Campion, R.P., Wang, K.Y., Farley, N.R.S., Foxon, C.T., Sawicki, M., Dietl, T., Nardelli, M.B., and Bernholc, J., Phys. Rev. Lett. 92, 037201 (2004).Google Scholar
35. De Boeck, J., Oesterholt, R., Van Esch, A., Bender, H., Bruynseraede, Y., Van Hoof, C., and Borghs, G., Appl. Phys. Lett. 68. 2744 (1996).Google Scholar
36. Tanaka, M., Semicond. Sci. Technol., 17, 327 (2002), and REFERENCES therein.Google Scholar
37. Moreno, M., Trampert, A., Jenichen, B., Däweritz, L., and Ploog, K.H., J. Appl. Phys. 92, 4672 (2002).Google Scholar
38. Moreno, M., Jenichen, B., Kaganer, V., Braun, W., Trampert, A., Däweritz, L., and Ploog, K. H., Phys. Rev. B 67, 235206 (2003).Google Scholar
39. Lmpalzer, M., Volz, K., Tretmann, W., Nau, S., Torunski, T., Meggs, K., Lorberth, J., and Stolz, W., J. Cryst. Growth 248, 474 (2003).Google Scholar
40. Graf, T., Goennenwein, S.T.B.; and Brandt, M.S., phys. stat. sol. (b) 239, 277 (2003), and REFERENCES therein.Google Scholar
41. Wolos, A., Palczewska, M., Zajac, M., Gosk, J., Kaminska, M., Twardowski, A., Bockowski, M., Grzegory, I., and Porowski, S., Phys. Rev. B 69, 115210 (2004).Google Scholar
42. Wolos, A., Palczewska, M., Wilamowski, Z., Kaminska, M., Twardowski, A., Bockowski, M., Grzegory, I., and Porowski, S., Appl. Phys. Lett. 83, 5428 (2003).Google Scholar
43. Andrearczyk, T.,, Jaroszyński, J., Sawicki, M., Khoi, Le Van, Dietl, T., Ferrand, D., Bourgognon, C., Cibert, J., Tatarenko, S., Fukumura, T., Jin, Z., Koinuma, H., and Kawasaki, M., in Proc. 25th Int. Conf on Physics of Semiconductors, edited by Miura, N.. and Ando, T. (Berlin: Springer, 2001) pp. 235.Google Scholar
44. Jaroszyński, J., Andrearczyk, T., Karczewski, G., Wróbel, J., Wojtowicz, T., Papis, E., Kamińska, E., Piotrowska, A., Popović, D., and Dietl, T., Phys. Rev. Lett. 89, 266802 (2002).Google Scholar
45. Edmonds, K.W., Novikov, S.V., Sawickiı, M., Campion, R.P., Staddon, C.R., Giddings, A.D., Zhao, L.X., Wang, K.Y., Dietl, T., Foxon, C.T., and Gallagher, B.L., cond-mat/0411476.Google Scholar
46. Sawicki, M., Dietl, T., Foxon, C.T., Novikov, S.V., Campion, R.P., Edmonds, K.W., Wang, K.Y., Giddings, A.D., and Gallagher, B.L., in: Proceedings 27th International Conference on Physics of Semiconductors, Flagstaff, Arizona, 2004, ed. Mendez, E. (AIP Proceedings), in press; cond-mat/ 0410551.Google Scholar
47. see, Marfaing, Y., phys. stat. sol. (b) 229, 229 (2002).Google Scholar
48. Sawicki, M., Khoi, Le Van, Hansen, L., Ferrand, D., Molenkamp, L.W., Waag, A., and Dietl, T., phys. stat. sol. (b) 229, 717 (2002).Google Scholar
49. Ke¸pa, H., Khoi, Le Van, Brown, C.M., Sawicki, M., Furdyna, J.K., Giebułtowicz, T.M., and Dietl, T., Phys. Rev. Lett. 91, 087205 (2003).Google Scholar
50. Durst, A. C., Bhatt, R. N., and Wolff, P. A., Phys. Rev. B 65, 235205 (2002).Google Scholar
51. Kaminski, A. and Das Sarma, S., Phys. Rev. Lett. 88, 247202 (2002);Google Scholar
52. Giraud, R., Kuroda, S., Marcet, S., Bellet-Amalric, E., Biquard, X., Barbara, B., Fruchart, D., Ferrand, D., Cibert, J. and Mariette, H., Europhys. Lett. 65, 553 (2004).Google Scholar
53. Majewski, J. and Vogl, P., in: Proceedings 27th International Conference on Physics of Semiconductors, Flagstaff, Arizona, 2004, ed. Mendez, E. (AIP Proceedings), in press.Google Scholar