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Spin Resonance Investigations of GaN and AlGaN

Published online by Cambridge University Press:  10 February 2011

N. M. Reinacher ,
H. Angerer ,
O. Ambacher ,
M. S. Brandt  and
M. Stutzmann
N. M. Reinacher
Affiliation:
Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, email: [email protected]
H. Angerer
Affiliation:
Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, email: [email protected]
O. Ambacher
Affiliation:
Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, email: [email protected]
M. S. Brandt
Affiliation:
Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, email: [email protected]
M. Stutzmann
Affiliation:
Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, email: [email protected]
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Abstract

Electron Spin Resonance (ESR) and related methods have been used to study defects in GaN and in AlxGa1-xN ternary alloys. In particular, Light-induced ESR of a thick MOCVD grown layer of GaN shows that the ESR signature of the deep defect appears for excitation energies > 2.6 eV and saturates above 2.7 eV. This information provides a direct measure of the energetic level position of the diamagnetic to paramagnetic transition of this center. Furthermore, standard ESR investigations of MBE-grown layers of AlxGa1-xN alloys were performed with emphasis on the effective-mass donor resonance. Composition and temperature-dependent measurements of the resonance position are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 579
Copyright
Copyright © Materials Research Society 1997

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References

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