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Spin Relaxation in SiGe Islands

Published online by Cambridge University Press:  01 February 2011

Hans Malissa ,
Wolfgang Jantsch ,
Gang Chen ,
Herbert Lichtenberger ,
Thomas Fromherz ,
Friedrich Schäffler ,
Günther Bauer ,
Alexei Tyryshkin ,
Stephen Lyon  and
Zbyslaw Wilamowski
Hans Malissa
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Wolfgang Jantsch
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Gang Chen
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Herbert Lichtenberger
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Thomas Fromherz
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Friedrich Schäffler
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Günther Bauer
Affiliation:
[email protected], Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Alexei Tyryshkin
Affiliation:
[email protected], Princeton University, Department of Electrical Engineering, Princeton, NJ, 08544, United States
Stephen Lyon
Affiliation:
[email protected], Princeton University, Department of Electrical Engineering, Princeton, NJ, 08544, United States
Zbyslaw Wilamowski
Affiliation:
[email protected], Institute of Physics, Polish Academy of Sciences, Warsaw, N/A, Poland
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Abstract

We present our work on the spin relaxation of electrons confined in SiGe islands. Ge islands are grown on unstructured and structured Si(100) substrates by MBE, and lead to strain in the Si layer that is deposited on top. These quantum dot structures are investigated by photoluminescence and electron spin resonance (ESR) experiments, the latter both in continuous wave and pulsed mode. We observe a g-factor and an ESR line width that correspond to Si conduction band electrons with additional inhomogeneous broadening.

Keywords

spintronicelectron spin resonanceSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L03-04
Copyright
Copyright © Materials Research Society 2007

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References

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