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Spin Polarization and Injection in ZnMnSe/ZnCdSe Heterostructures

Published online by Cambridge University Press:  17 March 2011

I.A. Buyanova ,
W.M. Chen ,
I.G. Ivanov ,
B. Monemar ,
A.A. Toropov ,
Ya.V. Terent'ev ,
S.V. Sorokin ,
A.V. Lebedev ,
S.V. Ivanov  and
P.S. Kop'ev
I.A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
I.G. Ivanov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
A.A. Toropov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences Polytechnicheskaya 26, St. Petersburg, 194021, RUSSIA
Ya.V. Terent'ev
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences Polytechnicheskaya 26, St. Petersburg, 194021, RUSSIA
S.V. Sorokin
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences Polytechnicheskaya 26, St. Petersburg, 194021, RUSSIA
A.V. Lebedev
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences Polytechnicheskaya 26, St. Petersburg, 194021, RUSSIA
S.V. Ivanov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences Polytechnicheskaya 26, St. Petersburg, 194021, RUSSIA
P.S. Kop'ev
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences Polytechnicheskaya 26, St. Petersburg, 194021, RUSSIA
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Abstract

Magneto-optical spectroscopy in combination with tunable laser excitation spectroscopy is employed to carry out a detailed study of spin alignment and spin injection in II-VI wide-bandgap semiconductor heterostructures, aiming at optimization of structural design for nano-scale spintronic applications. The use of tunable excitation is shown to provide a valuable opportunity to monitor separately spin relaxation and spin injection processes in the structures. Efficient spin alignment is achieved by using a diluted magnetic semiconductor (DMS) (a layer of ZnMnSe or a ZnMnSe/CdSe superlattice) as thin as 10 nm. The spin alignment efficiency is shown to depend critically on the ratio between the rates of spin relaxation and spin transport within the DMS layer. This allows the realization of spin alignment and spin switching functions by varying the structural design.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F1.7
Copyright
Copyright © Materials Research Society 2002

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References

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