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Spin Lifetime Tuning in Zincblende Heterostructures and Tions to Spin Devices

Published online by Cambridge University Press:  15 March 2011

X. Cartoixà ,
D. Z.-Y. Ting  and
Y.-C. Chang
D. Z.-Y. Ting
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Y.-C. Chang
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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Abstract

We present analytical expressions for the D'yakonov-Perel' spin relaxation rates under the combined action of bulk and structural inversion asymmetry for [111] zincblende heterostructures when terms up to linear and third order in k are included in the Hamiltonian. We see for [111] heterostructures that, under the right conditions, the lowest-order-in-k component of the spin relaxation tensor can be made to vanish for all spin components at the same time. We study how the inclusion of terms of higher order in k affects these results. We finally discuss a proposal for a resonant spin lifetime transistor (RSLT) using the spin lifetime tuning concepts presented above, where the characteristics of the [111] device give the designer an added degree of freedom on the direction of the injected spins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G6.6
Copyright
Copyright © Materials Research Society 2004

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References

[1] Esaki, L., Tsu, R., IBM J. Res. Develop. 14, 61 (1970).Google Scholar
[2] Likharev, K. K., Proc. IEEE 87, 606 (1999).And References therein.Google Scholar
[3] Datta, S., Das, B., Appl. Phys. Lett. 56, 665 (1990).Google Scholar
[4] Bychkov, Y. A., Rashba, E. I., J. Phys. C 17, 6039 (1984).Google Scholar
[5] Dresselhaus, G., Phys. Rev. 100, 580 (1955).Google Scholar
[6] D'yakonov, M. I., Perel', V. I., Fiz. Tverd. Tel. 13, 3581 (1971).Google Scholar
[7] D'yakonov, M. I., Kachorovskii, V. Y., Fiz. Tekh. Poluprovodn. 20, 178 (1986). [Sov. Phys. Semicond. 20, 110 (1986)].Google Scholar
[8] Luo, J., Munekata, H., Fang, F. F., Stiles, P. J., Phys. Rev. B 38, 10142 (1988).Google Scholar
[9] Pikus, G. E., Titkov, A. N., Optical Orientation, Meier, F., Zakharchenya, B. P., eds. (North Holland, Amsterdam, Netherlands, 1984), vol. 8, pp. 73–131.Google Scholar
[10] Averkiev, N. S., Golub, L. E., Willander, M., J. Phys.: Condens. Matter 14, R271 (2002).Google Scholar
[11] Schliemann, J., Egues, J. C., Loss, D., Phys. Rev. Lett. 90, 146801 (2003).Google Scholar
[12] Cartoixà, X., Ting, D. Z.-Y., Chang, Y.-C., Appl. Phys. Lett. 83, 1462 (2003).Google Scholar
[13] Averkiev, N. S., Golub, L. E., Phys. Rev. B 60, 15582 (1999).Google Scholar
[14] Kiselev, A. A., Kim, K. W., Phys. Stat. Sol. (b) 221, 491 (2000).Google Scholar
[15] Hall, K. C., Lau, W. H., Gündogdu, K., Flattà, M. E., Boggess, T. F., Appl. Phys. Lett. 83, 2937 (2003).Google Scholar
[16] Eppenga, R., Schuurmans, M. F. H., Phys. Rev. B 37, 10923 (1988).Google Scholar
[17] Cartoixà, X., Ting, D. Z.-Y., Chang, Y.-C., cond-mat/0402237 (2004).Google Scholar
[18] Lau, W. H., Olesberg, J. T., Flattàé, M. E., Phys. Rev. B 64, 161301 (2001).Google Scholar
[19] Schäapers, T., Engels, G., Lange, J., Klocke, T., Hollfelder, M., Lüth, H., J. Appl. Phys. 83, 4324 (1998).Google Scholar
[20] Cartoixà, X., Ting, D. Z.-Y., Daniel, E. S., McGill, T. C., Superlatt. Microstruct. 30, 309 (2001).Google Scholar
[21] Nitta, J., Akazaki, T., Takayanagi, H., Enoki, T., Phys. Rev. Lett. 78, 1335 (1997).Google Scholar
[22] Cardona, M., Christensen, N. E., Fasol, G., Phys. Rev. B 38, 1806 (1988).Google Scholar
[23] Cartoixà, X., Ting, D. Z.-Y., McGill, T. C., cond-mat/0212394 (2002).Google Scholar
[24] Elliott, R. J., Phys. Rev. 96, 266 (1954).Google Scholar
[25] Yafet, Y., Solid State Physics, Seitz, F., Turnbull, D., eds. (Academic Press, New York, 1963), vol. 14, pp. 1–98.Google Scholar
[26] Bir, G. L., Aronov, A. G., Pikus, G. E., Zh. Eksp. Teor. Fiz. 69, 1382 (1975). [Sov. Phys. JETP 42, 705 (1976)].Google Scholar
[27] Ohno, Y., Terauchi, R., Adachi, T., Matsukura, F., Ohno, H., Phys. Rev. Lett. 83, 4196 (1999).Google Scholar
[28] Karimov, O. Z., John, G. H., Harley, R. T., Lau, W. H., Flatte, M. E., Henini, M., Airey, R., Phys. Rev. Lett. 91, 246601 (2003).Google Scholar
[29] Tsang, C., Fontana, R. E., Lin, T., Heim, D. E., Speriosu, V. S., Gurney, B. A., Mason, M. L., IEEE Trans. Magn. 30, 3801 (1994).Google Scholar